Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET

Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET

Line-edge-roughness (LER) is one of undesirable process-induced random variation sources. LER is mostly occurred in the process of photo-lithography and etching, and it provokes random variation in performance of transistors such as metal oxide semiconductor field effect transistor (MOSFET), fin-sha...

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Bibliografische gegevens
Hoofdauteurs: Jaehyuk Lim, Jinwoong Lee, Changhwan Shin
Formaat: Artikel
Taal:English
Gepubliceerd in: IEEE 2021-01-01
Reeks:IEEE Access
Onderwerpen:
Line edge roughness
process-induced random variation
FinFET
machine learning
artificial neural network
Online toegang:https://ieeexplore.ieee.org/document/9452104/

Internet

https://ieeexplore.ieee.org/document/9452104/

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