Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range
The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role of conductivity and polarization of the DLC layer on the blocking capability of a p-n junction has been explain...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9404302/ |
| _version_ | 1818294857825779712 |
|---|---|
| author | L. Balestra S. Reggiani A. Gnudi E. Gnani J. Dobrzynska J. Vobecky |
| author_facet | L. Balestra S. Reggiani A. Gnudi E. Gnani J. Dobrzynska J. Vobecky |
| author_sort | L. Balestra |
| collection | DOAJ |
| description | The diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role of conductivity and polarization of the DLC layer on the blocking capability of a p-n junction has been explained recently, the thermal behavior still needs to be addressed. For this purpose, the diode leakage current was measured on large area power diodes with negative bevel coated by the DLC in a typical industrial range between 300 and 413 K. An unusual deviation from the expected Arrhenius law was experimentally observed. A predictive TCAD model, which incorporates the effect of the DLC layer, has been developed to study the impact of the DLC layer parameters on diode thermal performance. Both the electrostatic features and charge transport mechanisms through and along the DLC/Silicon interface have been modeled over a wide range of temperatures. Different DLC/Silicon doping combinations have been analyzed to explain the main effects determining the temperature dependence of diode leakage current and breakdown voltage. A complete validation of the TCAD approach has been achieved. |
| first_indexed | 2024-12-13T03:38:25Z |
| format | Article |
| id | doaj.art-d55c214f3db0445a9ef9346f0e48bf05 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T03:38:25Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-d55c214f3db0445a9ef9346f0e48bf052022-12-22T00:00:59ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01943144010.1109/JEDS.2021.30732329404302Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature RangeL. Balestra0https://orcid.org/0000-0002-0598-899XS. Reggiani1https://orcid.org/0000-0002-9616-8558A. Gnudi2https://orcid.org/0000-0002-2186-3468E. Gnani3https://orcid.org/0000-0001-6949-5919J. Dobrzynska4J. Vobecky5https://orcid.org/0000-0002-2078-2244ARCES Research Center, University of Bologna, Bologna, ItalyARCES Research Center, University of Bologna, Bologna, ItalyARCES Research Center, University of Bologna, Bologna, ItalyARCES Research Center, University of Bologna, Bologna, ItalyHitachi ABB Power Grids, Lenzburg, SwitzerlandHitachi ABB Power Grids, Lenzburg, SwitzerlandThe diamond-like carbon (DLC) is important for passivation of junction termination in high power devices due to its excellent electrical, mechanical, and thermal properties. While the role of conductivity and polarization of the DLC layer on the blocking capability of a p-n junction has been explained recently, the thermal behavior still needs to be addressed. For this purpose, the diode leakage current was measured on large area power diodes with negative bevel coated by the DLC in a typical industrial range between 300 and 413 K. An unusual deviation from the expected Arrhenius law was experimentally observed. A predictive TCAD model, which incorporates the effect of the DLC layer, has been developed to study the impact of the DLC layer parameters on diode thermal performance. Both the electrostatic features and charge transport mechanisms through and along the DLC/Silicon interface have been modeled over a wide range of temperatures. Different DLC/Silicon doping combinations have been analyzed to explain the main effects determining the temperature dependence of diode leakage current and breakdown voltage. A complete validation of the TCAD approach has been achieved.https://ieeexplore.ieee.org/document/9404302/Diamond-like carbon (DLC)junction termination (JT)negative bevelpower semiconductor devicesTCAD modeling |
| spellingShingle | L. Balestra S. Reggiani A. Gnudi E. Gnani J. Dobrzynska J. Vobecky Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range IEEE Journal of the Electron Devices Society Diamond-like carbon (DLC) junction termination (JT) negative bevel power semiconductor devices TCAD modeling |
| title | Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range |
| title_full | Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range |
| title_fullStr | Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range |
| title_full_unstemmed | Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range |
| title_short | Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range |
| title_sort | influence of the dlc passivation conductivity on the performance of silicon high power diodes over an extended temperature range |
| topic | Diamond-like carbon (DLC) junction termination (JT) negative bevel power semiconductor devices TCAD modeling |
| url | https://ieeexplore.ieee.org/document/9404302/ |
| work_keys_str_mv | AT lbalestra influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange AT sreggiani influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange AT agnudi influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange AT egnani influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange AT jdobrzynska influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange AT jvobecky influenceofthedlcpassivationconductivityontheperformanceofsiliconhighpowerdiodesoveranextendedtemperaturerange |