| Summary: | Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator (GI) exhibits the field-effect mobility (μ<sub>FE</sub>) of 16 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>, threshold voltage (V<sub>TH</sub>) of −0.45 V subthreshold swing (SS) of 133 mV/dec., and ON/OFF current ratio of ~10<sup>8</sup>. The optimal a-IGTO TFT shows excellent stability under positive-bias-temperature stress (PBTS) with a small ΔV<sub>TH</sub> shift of 0.35 V. The enhancements are due to the high film quality and fewer interfacial traps at the a-IGTO/ZAO interface. Therefore, the spray pyrolyzed a-IGTO TFT can be a promising candidate for flexible TFT in the next-generation display.
|
|---|