High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlO<sub>x</sub> Gate Insulator by Spray Pyrolysis

High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlO<sub>x</sub> Gate Insulator by Spray Pyrolysis

Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator...

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Bibliographic Details
Main Authors:	Yeoungjin Chang, Ravindra Naik Bukke, Youngoo Kim, Kiwan Ahn, Jinbaek Bae, Jin Jang
Format:	Article
Language:	English
Published:	MDPI AG 2023-01-01
Series:	Electronics
Subjects:	gallium amorphous IGTO solution process spray pyrolysis thin-film transistor
Online Access:	https://www.mdpi.com/2079-9292/12/3/688

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