Heterostructures based on inorganic and organic van der Waals systems
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4894435 |
| _version_ | 1828841073494982656 |
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| author | Gwan-Hyoung Lee Chul-Ho Lee Arend M. van der Zande Minyong Han Xu Cui Ghidewon Arefe Colin Nuckolls Tony F. Heinz James Hone Philip Kim |
| author_facet | Gwan-Hyoung Lee Chul-Ho Lee Arend M. van der Zande Minyong Han Xu Cui Ghidewon Arefe Colin Nuckolls Tony F. Heinz James Hone Philip Kim |
| author_sort | Gwan-Hyoung Lee |
| collection | DOAJ |
| description | The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors. |
| first_indexed | 2024-12-12T19:55:45Z |
| format | Article |
| id | doaj.art-d599e010ca9742348cf59bdb4b99e7e4 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-12T19:55:45Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-d599e010ca9742348cf59bdb4b99e7e42022-12-22T00:13:54ZengAIP Publishing LLCAPL Materials2166-532X2014-09-0129092511092511-710.1063/1.4894435014492APMHeterostructures based on inorganic and organic van der Waals systemsGwan-Hyoung Lee0Chul-Ho Lee1Arend M. van der Zande2Minyong Han3Xu Cui4Ghidewon Arefe5Colin Nuckolls6Tony F. Heinz7James Hone8Philip Kim9Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South KoreaKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, South KoreaEnergy Frontier Research Center (EFRC), Columbia University, New York, New York 10027, USADepartment of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USADepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USADepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USADepartment of Chemistry, Columbia University, New York, New York 10027, USADepartment of Electrical Engineering, Columbia University, New York, New York 10027, USADepartment of Mechanical Engineering, Columbia University, New York, New York 10027, USADepartment of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USAThe two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.http://dx.doi.org/10.1063/1.4894435 |
| spellingShingle | Gwan-Hyoung Lee Chul-Ho Lee Arend M. van der Zande Minyong Han Xu Cui Ghidewon Arefe Colin Nuckolls Tony F. Heinz James Hone Philip Kim Heterostructures based on inorganic and organic van der Waals systems APL Materials |
| title | Heterostructures based on inorganic and organic van der Waals systems |
| title_full | Heterostructures based on inorganic and organic van der Waals systems |
| title_fullStr | Heterostructures based on inorganic and organic van der Waals systems |
| title_full_unstemmed | Heterostructures based on inorganic and organic van der Waals systems |
| title_short | Heterostructures based on inorganic and organic van der Waals systems |
| title_sort | heterostructures based on inorganic and organic van der waals systems |
| url | http://dx.doi.org/10.1063/1.4894435 |
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