Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor

We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly compos...

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Main Authors: Jaewoo Lee, Jong-Pil Im, Jeong-Hun Kim, Sol-Yee Lim, Seung-Eon Moon
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/19/3/488
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author Jaewoo Lee
Jong-Pil Im
Jeong-Hun Kim
Sol-Yee Lim
Seung-Eon Moon
author_facet Jaewoo Lee
Jong-Pil Im
Jeong-Hun Kim
Sol-Yee Lim
Seung-Eon Moon
author_sort Jaewoo Lee
collection DOAJ
description We present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly composed of two key strategies: the approximately linearized electric-field method (ALEM) and the open- and short-calibration method (OSCM). Analytical ALEM can separate the intrinsic capacitance from the capacitance of the acoustic sensor itself, while empirical OSCM, on the basis of one additional test sample excluding the membrane, can extract the capacitance value of the active part from the entire sensor chip. FEM simulation verified the validity of the model within an error range of 2% in the unit cell. Dynamic open-circuit sensitivity is modelled from lumped parameters based on the equivalent electrical circuit, leading to a modelled resonance frequency under a bias condition. Thus, eliminating a complex read-out integrated circuit (ROIC) integration process, this mixed model not only simplifies the characterization process, but also improves the accuracy of the sensitivity because it considers the fringing field effect between the diaphragm and each etching hole in the back plate.
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spelling doaj.art-d5a146cdb937457db2133c943c8929782022-12-22T03:59:20ZengMDPI AGSensors1424-82202019-01-0119348810.3390/s19030488s19030488Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic SensorJaewoo Lee0Jong-Pil Im1Jeong-Hun Kim2Sol-Yee Lim3Seung-Eon Moon4ICT Materials & Components Research Lab., Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, KoreaICT Materials & Components Research Lab., Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, KoreaICT Materials & Components Research Lab., Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, KoreaICT Materials & Components Research Lab., Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, KoreaICT Materials & Components Research Lab., Electronics and Telecommunication Research Institute (ETRI), Daejeon 34129, KoreaWe present a simple, accurate open-circuit sensitivity model based on both analytically calculated lumped and empirically extracted lumped-parameters that enables a capacitive acoustic sensor to be efficiently characterized in the frequency domain at the wafer level. Our mixed model is mainly composed of two key strategies: the approximately linearized electric-field method (ALEM) and the open- and short-calibration method (OSCM). Analytical ALEM can separate the intrinsic capacitance from the capacitance of the acoustic sensor itself, while empirical OSCM, on the basis of one additional test sample excluding the membrane, can extract the capacitance value of the active part from the entire sensor chip. FEM simulation verified the validity of the model within an error range of 2% in the unit cell. Dynamic open-circuit sensitivity is modelled from lumped parameters based on the equivalent electrical circuit, leading to a modelled resonance frequency under a bias condition. Thus, eliminating a complex read-out integrated circuit (ROIC) integration process, this mixed model not only simplifies the characterization process, but also improves the accuracy of the sensitivity because it considers the fringing field effect between the diaphragm and each etching hole in the back plate.https://www.mdpi.com/1424-8220/19/3/488open-circuit sensitivitycapacitive MEMS acoustic sensoron wafer levelequivalent circuit-based modelling
spellingShingle Jaewoo Lee
Jong-Pil Im
Jeong-Hun Kim
Sol-Yee Lim
Seung-Eon Moon
Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
Sensors
open-circuit sensitivity
capacitive MEMS acoustic sensor
on wafer level
equivalent circuit-based modelling
title Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
title_full Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
title_fullStr Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
title_full_unstemmed Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
title_short Wafer-Level-Based Open-Circuit Sensitivity Model from Theoretical ALEM and Empirical OSCM Parameters for a Capacitive MEMS Acoustic Sensor
title_sort wafer level based open circuit sensitivity model from theoretical alem and empirical oscm parameters for a capacitive mems acoustic sensor
topic open-circuit sensitivity
capacitive MEMS acoustic sensor
on wafer level
equivalent circuit-based modelling
url https://www.mdpi.com/1424-8220/19/3/488
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AT jeonghunkim waferlevelbasedopencircuitsensitivitymodelfromtheoreticalalemandempiricaloscmparametersforacapacitivememsacousticsensor
AT solyeelim waferlevelbasedopencircuitsensitivitymodelfromtheoreticalalemandempiricaloscmparametersforacapacitivememsacousticsensor
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