Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief

A metrological stepped surface with atomically smooth edges, the heights of which have a calibrated size that is a multiple of the height of one monolayer, was obtained by using the example of epitaxial layers of lead telluride with a sublayer of calcium fluoride on (111) single-crystalline silicon...

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Main Authors: D.A. Kozodaev, A.Yu. Gagarina, Yu.M. Spivak, V.А. Moshnikov
Format: Article
Language:Russian
Published: Tver State University 2023-12-01
Series:Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
Subjects:
Online Access:https://physchemaspects.ru/2023/doi-10-26456-pcascnn-2023-15-127/?lang=en
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author D.A. Kozodaev
A.Yu. Gagarina
Yu.M. Spivak
V.А. Moshnikov
author_facet D.A. Kozodaev
A.Yu. Gagarina
Yu.M. Spivak
V.А. Moshnikov
author_sort D.A. Kozodaev
collection DOAJ
description A metrological stepped surface with atomically smooth edges, the heights of which have a calibrated size that is a multiple of the height of one monolayer, was obtained by using the example of epitaxial layers of lead telluride with a sublayer of calcium fluoride on (111) single-crystalline silicon substrate. The morphology of the relief was studied using atomic force microscopy. An assessment was made of the stepped relief resulting from the occurrence of mechanical stresses at the «epitaxial layer-substrate» interface. It has been established that the side walls of the steps are cut along crystallographic planes belonging to the {100} set and the walls of the steps are inclined at angles of 54,7° and 144,7° to the plane of the base of the test sample. Recommendations are proposed for the use of calibration samples for a series of epitaxial layers of lead telluride to evaluate the instrumental function of probes.
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spelling doaj.art-d5cd4641c10f41cc83f402ba93ae3f6a2023-12-02T14:25:25ZrusTver State UniversityФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов2226-44422658-43602023-12-011512713410.26456/pcascnn/2023.15.127Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface reliefD.A. Kozodaev0A.Yu. Gagarina1Yu.M. Spivak2V.А. Moshnikov3«NT-MDT», Zelenograd, RussiaSaint Petersburg Electrotechnical University «LETI» named after V.I. Ulyanov (Lenin) St. Petersburg, RussiaSaint Petersburg Electrotechnical University «LETI» named after V.I. Ulyanov (Lenin) St. Petersburg, RussiaSaint Petersburg Electrotechnical University «LETI» named after V.I. Ulyanov (Lenin) St. Petersburg, RussiaA metrological stepped surface with atomically smooth edges, the heights of which have a calibrated size that is a multiple of the height of one monolayer, was obtained by using the example of epitaxial layers of lead telluride with a sublayer of calcium fluoride on (111) single-crystalline silicon substrate. The morphology of the relief was studied using atomic force microscopy. An assessment was made of the stepped relief resulting from the occurrence of mechanical stresses at the «epitaxial layer-substrate» interface. It has been established that the side walls of the steps are cut along crystallographic planes belonging to the {100} set and the walls of the steps are inclined at angles of 54,7° and 144,7° to the plane of the base of the test sample. Recommendations are proposed for the use of calibration samples for a series of epitaxial layers of lead telluride to evaluate the instrumental function of probes.https://physchemaspects.ru/2023/doi-10-26456-pcascnn-2023-15-127/?lang=enscanning probe microscopyatomic force microscopylead chalcogenidesnanomaterialstest sample
spellingShingle D.A. Kozodaev
A.Yu. Gagarina
Yu.M. Spivak
V.А. Moshnikov
Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
scanning probe microscopy
atomic force microscopy
lead chalcogenides
nanomaterials
test sample
title Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
title_full Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
title_fullStr Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
title_full_unstemmed Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
title_short Structures on heteroepitaxial layers of PbTe(111)-ON-Si with stepped submicron surface relief
title_sort structures on heteroepitaxial layers of pbte 111 on si with stepped submicron surface relief
topic scanning probe microscopy
atomic force microscopy
lead chalcogenides
nanomaterials
test sample
url https://physchemaspects.ru/2023/doi-10-26456-pcascnn-2023-15-127/?lang=en
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AT yumspivak structuresonheteroepitaxiallayersofpbte111onsiwithsteppedsubmicronsurfacerelief
AT vamoshnikov structuresonheteroepitaxiallayersofpbte111onsiwithsteppedsubmicronsurfacerelief