Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors
Abstract Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202300373 |
| _version_ | 1797825279080529920 |
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| author | Lingyan Liang Hengbo Zhang Ting Li Wanfa Li Junhua Gao Hongliang Zhang Min Guo Shangpeng Gao Zirui He Fengjuan Liu Ce Ning Hongtao Cao Guangcai Yuan Chuan Liu |
| author_facet | Lingyan Liang Hengbo Zhang Ting Li Wanfa Li Junhua Gao Hongliang Zhang Min Guo Shangpeng Gao Zirui He Fengjuan Liu Ce Ning Hongtao Cao Guangcai Yuan Chuan Liu |
| author_sort | Lingyan Liang |
| collection | DOAJ |
| description | Abstract Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays. |
| first_indexed | 2024-03-13T10:51:40Z |
| format | Article |
| id | doaj.art-d5db4d5ab24a44c2b7e2cf171c7726cc |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-13T10:51:40Z |
| publishDate | 2023-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-d5db4d5ab24a44c2b7e2cf171c7726cc2023-05-17T13:02:05ZengWileyAdvanced Science2198-38442023-05-011014n/an/a10.1002/advs.202300373Addressing the Conflict between Mobility and Stability in Oxide Thin‐film TransistorsLingyan Liang0Hengbo Zhang1Ting Li2Wanfa Li3Junhua Gao4Hongliang Zhang5Min Guo6Shangpeng Gao7Zirui He8Fengjuan Liu9Ce Ning10Hongtao Cao11Guangcai Yuan12Chuan Liu13Laboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaState Key Lab of Opto‐Electronic Materials and Technologies School of Electronics and Information Technology Sun Yat‐Sen University Guangzhou 510275 P. R. ChinaDepartment of Materials Science Fudan University Shanghai 200433 P. R. ChinaDepartment of Materials Science Fudan University Shanghai 200433 P. R. ChinaLaboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. ChinaBOE Technology Group Co. Ltd. Beijing 100176 P. R. ChinaCenter of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. ChinaBOE Technology Group Co. Ltd. Beijing 100176 P. R. ChinaState Key Lab of Opto‐Electronic Materials and Technologies School of Electronics and Information Technology Sun Yat‐Sen University Guangzhou 510275 P. R. ChinaAbstract Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility‐stability conflict. The charge transport layer (CTL) is made of amorphous In‐rich InSnZnO, which favors big average effective coordination number for all cations and more edge‐shared structures for better charge transport. Praseodymium‐doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo‐generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V−1 s−1) and small negative‐bias‐illumination‐stress/positive‐bias‐temperature‐stress voltage shifts (−1.64/0.76 V). The design concept provides a promising route to address the mobility‐stability conflict for high‐end displays.https://doi.org/10.1002/advs.202300373carrier relaxationmetal oxide semiconductorspercolation theoryphotocarrier lifetimethin‐film transistors |
| spellingShingle | Lingyan Liang Hengbo Zhang Ting Li Wanfa Li Junhua Gao Hongliang Zhang Min Guo Shangpeng Gao Zirui He Fengjuan Liu Ce Ning Hongtao Cao Guangcai Yuan Chuan Liu Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors Advanced Science carrier relaxation metal oxide semiconductors percolation theory photocarrier lifetime thin‐film transistors |
| title | Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors |
| title_full | Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors |
| title_fullStr | Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors |
| title_full_unstemmed | Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors |
| title_short | Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors |
| title_sort | addressing the conflict between mobility and stability in oxide thin film transistors |
| topic | carrier relaxation metal oxide semiconductors percolation theory photocarrier lifetime thin‐film transistors |
| url | https://doi.org/10.1002/advs.202300373 |
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