Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted
The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p<sup>++</sup>-GaAs/n<sup>++...
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MDPI AG
2020-11-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/10/12/1092 |
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| author | Yudan Gou Jun Wang Yang Cheng Yintao Guo Xiao Xiao Heng Liu Shaoyang Tan Li Zhou Huomu Yang Guoliang Deng Shouhuan Zhou |
| author_facet | Yudan Gou Jun Wang Yang Cheng Yintao Guo Xiao Xiao Heng Liu Shaoyang Tan Li Zhou Huomu Yang Guoliang Deng Shouhuan Zhou |
| author_sort | Yudan Gou |
| collection | DOAJ |
| description | The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs tunnel junctions and report a peak current density as high as 5839 A cm<sup>−2</sup> with a series resistance of 5.86 × 10<sup>−5</sup> Ω cm<sup>2</sup>. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling. |
| first_indexed | 2024-03-10T14:28:33Z |
| format | Article |
| id | doaj.art-d612da80ee6f4480b80def744bbddd88 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T14:28:33Z |
| publishDate | 2020-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-d612da80ee6f4480b80def744bbddd882023-11-20T22:47:53ZengMDPI AGCrystals2073-43522020-11-011012109210.3390/cryst10121092Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well InsertedYudan Gou0Jun Wang1Yang Cheng2Yintao Guo3Xiao Xiao4Heng Liu5Shaoyang Tan6Li Zhou7Huomu Yang8Guoliang Deng9Shouhuan Zhou10College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Electronics and Information Engineering, Sichuan University, Chengdu 610065, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaSuzhou Everbright Photonics Co., Ltd., Suzhou 215000, ChinaCollege of Electronics and Information Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Electronics and Information Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Electronics and Information Engineering, Sichuan University, Chengdu 610065, ChinaThe development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs tunnel junctions and report a peak current density as high as 5839 A cm<sup>−2</sup> with a series resistance of 5.86 × 10<sup>−5</sup> Ω cm<sup>2</sup>. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.https://www.mdpi.com/2073-4352/10/12/1092tunnel junctionMOCVDquantum wellco-dopingsolar cells |
| spellingShingle | Yudan Gou Jun Wang Yang Cheng Yintao Guo Xiao Xiao Heng Liu Shaoyang Tan Li Zhou Huomu Yang Guoliang Deng Shouhuan Zhou Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted Crystals tunnel junction MOCVD quantum well co-doping solar cells |
| title | Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted |
| title_full | Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted |
| title_fullStr | Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted |
| title_full_unstemmed | Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted |
| title_short | Experimental and Modeling Study on the High-Performance p<sup>++</sup>-GaAs/n<sup>++</sup>-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted |
| title_sort | experimental and modeling study on the high performance p sup sup gaas n sup sup gaas tunnel junctions with silicon and tellurium co doped ingaas quantum well inserted |
| topic | tunnel junction MOCVD quantum well co-doping solar cells |
| url | https://www.mdpi.com/2073-4352/10/12/1092 |
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