The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification
Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, un...
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| Format: | Article |
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MDPI AG
2023-09-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/28/17/6414 |
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| author | Linfeng He Jin Cheng Longjiang Zhao Xinyao Chen Xiaoping Zou Chunqian Zhang Junming Li |
| author_facet | Linfeng He Jin Cheng Longjiang Zhao Xinyao Chen Xiaoping Zou Chunqian Zhang Junming Li |
| author_sort | Linfeng He |
| collection | DOAJ |
| description | Tin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, understanding how the fill factor was influenced by device physical mechanisms is meaningful. In this study, we reported a method to improve the device fill factor using a thin cesium iodide layer modification in tin-based perovskite cells. With the thin passivation layer, a high-quality perovskite film with larger crystals and lower charge carrier densities was obtained. As a result, the series resistance of devices was decreased; the shunt resistance of devices was increased; and the non-radiative recombination of devices was suppressed. Consequently, the fill factor, and the device efficiency and stability were greatly enhanced. The champion tin-based perovskite cells showed a fill factor of 63%, an efficiency of 6.1% and excellent stability. Our study reveals that, with a moderate thin layer modification strategy, the long-term stability of tin-based PSCs can be developed. |
| first_indexed | 2024-03-10T23:16:48Z |
| format | Article |
| id | doaj.art-d62d2f5729db4ee797b94b30af27385b |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T23:16:48Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-d62d2f5729db4ee797b94b30af27385b2023-11-19T08:35:37ZengMDPI AGMolecules1420-30492023-09-012817641410.3390/molecules28176414The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide ModificationLinfeng He0Jin Cheng1Longjiang Zhao2Xinyao Chen3Xiaoping Zou4Chunqian Zhang5Junming Li6Beijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaCollege of Engineering, Qufu Normal University, Rizhao 276826, ChinaBeijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Key Laboratory for Sensor, School of Applied Science, Beijing Information Science and Technology University, Beijing 100101, ChinaTin-based perovskites are promising for realizing lead-free perovskite solar cells; however, there remains a significant challenge to achieving high-performance tin-based perovskite solar cells. In particular, the device fill factor was much lower than that of other photovoltaic cells. Therefore, understanding how the fill factor was influenced by device physical mechanisms is meaningful. In this study, we reported a method to improve the device fill factor using a thin cesium iodide layer modification in tin-based perovskite cells. With the thin passivation layer, a high-quality perovskite film with larger crystals and lower charge carrier densities was obtained. As a result, the series resistance of devices was decreased; the shunt resistance of devices was increased; and the non-radiative recombination of devices was suppressed. Consequently, the fill factor, and the device efficiency and stability were greatly enhanced. The champion tin-based perovskite cells showed a fill factor of 63%, an efficiency of 6.1% and excellent stability. Our study reveals that, with a moderate thin layer modification strategy, the long-term stability of tin-based PSCs can be developed.https://www.mdpi.com/1420-3049/28/17/6414cesium iodidefill factorstabilitylead-freetin-based perovskite |
| spellingShingle | Linfeng He Jin Cheng Longjiang Zhao Xinyao Chen Xiaoping Zou Chunqian Zhang Junming Li The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification Molecules cesium iodide fill factor stability lead-free tin-based perovskite |
| title | The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification |
| title_full | The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification |
| title_fullStr | The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification |
| title_full_unstemmed | The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification |
| title_short | The Defect Passivation of Tin Halide Perovskites Using a Cesium Iodide Modification |
| title_sort | defect passivation of tin halide perovskites using a cesium iodide modification |
| topic | cesium iodide fill factor stability lead-free tin-based perovskite |
| url | https://www.mdpi.com/1420-3049/28/17/6414 |
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