Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is studied based on the growth parameters employing X-ra...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5054378 |
| _version_ | 1828325436060336128 |
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| author | M. Kneiß A. Hassa D. Splith C. Sturm H. von Wenckstern T. Schultz N. Koch M. Lorenz M. Grundmann |
| author_facet | M. Kneiß A. Hassa D. Splith C. Sturm H. von Wenckstern T. Schultz N. Koch M. Lorenz M. Grundmann |
| author_sort | M. Kneiß |
| collection | DOAJ |
| description | High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is studied based on the growth parameters employing X-ray diffraction 2θ-ω scans, rocking curves, ϕ scans, and reciprocal space maps. Our layers exhibit superior crystalline properties in comparison to thin films deposited in the monoclinic β-phase at nominally identical growth parameters. Furthermore, the surface morphology is significantly improved and the root-mean-squared roughness of the layers was as low as ≈0.5 nm, on par with homoepitaxial β-Ga2O3 thin films in the literature. The orthorhombic structure of the thin films was evidenced, and the epitaxial relationships were determined for each kind of the substrate. A tin-enriched surface layer on our thin films measured by depth-resolved photoelectron spectroscopy suggests surfactant-mediated epitaxy as a possible growth mechanism. Thin films in the κ-phase are a promising alternative for β-Ga2O3 layers in electronic and optoelectronic device applications. |
| first_indexed | 2024-04-13T19:21:48Z |
| format | Article |
| id | doaj.art-d68b969b54b643e89deb6e0260fc8f78 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T19:21:48Z |
| publishDate | 2019-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-d68b969b54b643e89deb6e0260fc8f782022-12-22T02:33:30ZengAIP Publishing LLCAPL Materials2166-532X2019-02-0172022516022516-1110.1063/1.5054378018992APMTin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline qualityM. Kneiß0A. Hassa1D. Splith2C. Sturm3H. von Wenckstern4T. Schultz5N. Koch6M. Lorenz7M. Grundmann8Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyHumboldt Universität zu Berlin, Institut für Physik, Brook-Taylor-Straße 6, 12489 Berlin, GermanyHumboldt Universität zu Berlin, Institut für Physik, Brook-Taylor-Straße 6, 12489 Berlin, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyFelix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, GermanyHigh-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is studied based on the growth parameters employing X-ray diffraction 2θ-ω scans, rocking curves, ϕ scans, and reciprocal space maps. Our layers exhibit superior crystalline properties in comparison to thin films deposited in the monoclinic β-phase at nominally identical growth parameters. Furthermore, the surface morphology is significantly improved and the root-mean-squared roughness of the layers was as low as ≈0.5 nm, on par with homoepitaxial β-Ga2O3 thin films in the literature. The orthorhombic structure of the thin films was evidenced, and the epitaxial relationships were determined for each kind of the substrate. A tin-enriched surface layer on our thin films measured by depth-resolved photoelectron spectroscopy suggests surfactant-mediated epitaxy as a possible growth mechanism. Thin films in the κ-phase are a promising alternative for β-Ga2O3 layers in electronic and optoelectronic device applications.http://dx.doi.org/10.1063/1.5054378 |
| spellingShingle | M. Kneiß A. Hassa D. Splith C. Sturm H. von Wenckstern T. Schultz N. Koch M. Lorenz M. Grundmann Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality APL Materials |
| title | Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality |
| title_full | Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality |
| title_fullStr | Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality |
| title_full_unstemmed | Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality |
| title_short | Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality |
| title_sort | tin assisted heteroepitaxial pld growth of κ ga2o3 thin films with high crystalline quality |
| url | http://dx.doi.org/10.1063/1.5054378 |
| work_keys_str_mv | AT mkneiß tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT ahassa tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT dsplith tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT csturm tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT hvonwenckstern tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT tschultz tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT nkoch tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT mlorenz tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality AT mgrundmann tinassistedheteroepitaxialpldgrowthofkga2o3thinfilmswithhighcrystallinequality |