Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)

Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)

Research on enhancement green light emitter is important to obtain a perfect red-green-blue (RGB) induced white light source. Unfortunately the present of mixed phase in deposition of InGaN/GaN limited the potential LED efficiency. Therefore, we introduce a new method called as Low Temperature Ammon...

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Bibliographic Details
Main Authors: Gary Tan, Ahmad Shuhaimi, Rizuan Norhaniza, Norhilmi Zahir, Yan Jie Low, Yew Hoong Wong, Wan Haliza Abd Majid
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Photonics
Subjects:
semipolar (11–22)
InGaN/GaN
low temperature ammonia treatment (LTAT)
green emission
effective V/III
Online Access:https://www.mdpi.com/2304-6732/9/9/646

Internet

https://www.mdpi.com/2304-6732/9/9/646

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