Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys

The elemental segregation behaviors and interactions between point defects and symmetrical tilt grain boundaries (GBs) in TiVTa concentrated solid–solution alloys (CSAs) have been studied through hybrid Monte Carlo/molecular dynamics (MC/MD) simulations. A pure V model, a random TiVTa CSA with rando...

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Main Authors: Linfeng Wang, Yongpeng Zhao, Yankun Dou, Xinfu He, Zhongao Zhang, Mengyao Chen, Huiqiu Deng, Wen Yang
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/14/2/166
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author Linfeng Wang
Yongpeng Zhao
Yankun Dou
Xinfu He
Zhongao Zhang
Mengyao Chen
Huiqiu Deng
Wen Yang
author_facet Linfeng Wang
Yongpeng Zhao
Yankun Dou
Xinfu He
Zhongao Zhang
Mengyao Chen
Huiqiu Deng
Wen Yang
author_sort Linfeng Wang
collection DOAJ
description The elemental segregation behaviors and interactions between point defects and symmetrical tilt grain boundaries (GBs) in TiVTa concentrated solid–solution alloys (CSAs) have been studied through hybrid Monte Carlo/molecular dynamics (MC/MD) simulations. A pure V model, a random TiVTa CSA with randomly distributed elements, and an equilibrated TiVTa CSA with Ti segregation were constructed to investigate the influence of chemical disorder and local elemental segregation on defect–GB interactions. For defect–GB interactions, GBs interact more strongly with interstitials than with vacancies. Compared with the pure V, the vacancy absorption length scale of GBs is greater, whereas the interstitial absorption length scale of GBs is shorter in TiVTa CSAs due to the chemical fluctuation and local lattice distortion. This means a higher recombination efficiency of point defects in TiVTa CSAs. The elemental (Ti) segregation in TiVTa CSAs can further enhance the sink strength of GBs towards interstitials, while simultaneously reducing their sink strength towards vacancies. Consequently, the preference effects of GBs towards interstitials and vacancies are amplified in the equilibrated CSA due to local ordering, thereby reducing efficient defect annihilation around GBs. These results provide fundamental insights into the irradiation defect dynamics of CSAs with body-centered cubic (bcc) structure.
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spelling doaj.art-d6cea732206c407db8ae0ddf713a98172024-02-23T15:13:15ZengMDPI AGCrystals2073-43522024-02-0114216610.3390/cryst14020166Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution AlloysLinfeng Wang0Yongpeng Zhao1Yankun Dou2Xinfu He3Zhongao Zhang4Mengyao Chen5Huiqiu Deng6Wen Yang7Institute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaSchool of Physics and Electronics, Hunan University, Changsha 410082, ChinaInstitute of Reactor Engineering and Technology, China Institute of Atomic Energy, Beijing 102413, ChinaThe elemental segregation behaviors and interactions between point defects and symmetrical tilt grain boundaries (GBs) in TiVTa concentrated solid–solution alloys (CSAs) have been studied through hybrid Monte Carlo/molecular dynamics (MC/MD) simulations. A pure V model, a random TiVTa CSA with randomly distributed elements, and an equilibrated TiVTa CSA with Ti segregation were constructed to investigate the influence of chemical disorder and local elemental segregation on defect–GB interactions. For defect–GB interactions, GBs interact more strongly with interstitials than with vacancies. Compared with the pure V, the vacancy absorption length scale of GBs is greater, whereas the interstitial absorption length scale of GBs is shorter in TiVTa CSAs due to the chemical fluctuation and local lattice distortion. This means a higher recombination efficiency of point defects in TiVTa CSAs. The elemental (Ti) segregation in TiVTa CSAs can further enhance the sink strength of GBs towards interstitials, while simultaneously reducing their sink strength towards vacancies. Consequently, the preference effects of GBs towards interstitials and vacancies are amplified in the equilibrated CSA due to local ordering, thereby reducing efficient defect annihilation around GBs. These results provide fundamental insights into the irradiation defect dynamics of CSAs with body-centered cubic (bcc) structure.https://www.mdpi.com/2073-4352/14/2/166concentrated solid–solution alloysgrain boundarylocal orderingpoint defectmolecular dynamics simulation
spellingShingle Linfeng Wang
Yongpeng Zhao
Yankun Dou
Xinfu He
Zhongao Zhang
Mengyao Chen
Huiqiu Deng
Wen Yang
Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
Crystals
concentrated solid–solution alloys
grain boundary
local ordering
point defect
molecular dynamics simulation
title Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
title_full Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
title_fullStr Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
title_full_unstemmed Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
title_short Atomistic Study on Defect–Grain Boundary Interactions in TiVTa Concentrated Solid–Solution Alloys
title_sort atomistic study on defect grain boundary interactions in tivta concentrated solid solution alloys
topic concentrated solid–solution alloys
grain boundary
local ordering
point defect
molecular dynamics simulation
url https://www.mdpi.com/2073-4352/14/2/166
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