Electrical Properties of Ba,Ho Doped PbI2
Barium and Holmium have been introduced into polycrystalline lead iodide duringsolution growth of thin films. Electrical characterization (current vs. voltage measurements ,resistivity, carrier concentration and mobilities as a function of the doping concentrations)clearly demonstrates that both dop...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2009-05-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_35653_6b2dcffde2d18107a9a82502a1d6eca2.pdf |
| _version_ | 1797325262550990848 |
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| author | Shatha Sh. Jamil Ali M. Mousa |
| author_facet | Shatha Sh. Jamil Ali M. Mousa |
| author_sort | Shatha Sh. Jamil |
| collection | DOAJ |
| description | Barium and Holmium have been introduced into polycrystalline lead iodide duringsolution growth of thin films. Electrical characterization (current vs. voltage measurements ,resistivity, carrier concentration and mobilities as a function of the doping concentrations)clearly demonstrates that both dopants introduce donor level in the PbI2 band gap andcompensate for the native acceptor defects of lead iodide, Barium as a dopant having thegreater influence. |
| first_indexed | 2024-03-08T06:07:02Z |
| format | Article |
| id | doaj.art-d6eec4211d324a48a9ed625879ee87cc |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:07:02Z |
| publishDate | 2009-05-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-d6eec4211d324a48a9ed625879ee87cc2024-02-04T17:49:20ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582009-05-012771317132310.30684/etj.27.7.835653Electrical Properties of Ba,Ho Doped PbI2Shatha Sh. JamilAli M. MousaBarium and Holmium have been introduced into polycrystalline lead iodide duringsolution growth of thin films. Electrical characterization (current vs. voltage measurements ,resistivity, carrier concentration and mobilities as a function of the doping concentrations)clearly demonstrates that both dopants introduce donor level in the PbI2 band gap andcompensate for the native acceptor defects of lead iodide, Barium as a dopant having thegreater influence.https://etj.uotechnology.edu.iq/article_35653_6b2dcffde2d18107a9a82502a1d6eca2.pdfelecterical properties of pbi |
| spellingShingle | Shatha Sh. Jamil Ali M. Mousa Electrical Properties of Ba,Ho Doped PbI2 Engineering and Technology Journal electerical properties of pbi |
| title | Electrical Properties of Ba,Ho Doped PbI2 |
| title_full | Electrical Properties of Ba,Ho Doped PbI2 |
| title_fullStr | Electrical Properties of Ba,Ho Doped PbI2 |
| title_full_unstemmed | Electrical Properties of Ba,Ho Doped PbI2 |
| title_short | Electrical Properties of Ba,Ho Doped PbI2 |
| title_sort | electrical properties of ba ho doped pbi2 |
| topic | electerical properties of pbi |
| url | https://etj.uotechnology.edu.iq/article_35653_6b2dcffde2d18107a9a82502a1d6eca2.pdf |
| work_keys_str_mv | AT shathashjamil electricalpropertiesofbahodopedpbi2 AT alimmousa electricalpropertiesofbahodopedpbi2 |