Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2
The dielectric properties of TiO2 triple–doped with Al3+/Sc3+/Nb5+ (ASNTO) prepared by a conventional mixed route were studied. Pure rutile–TiO2, highly dense microstructure and all elements homogeneously dispersed were observed. The existence of oxygen vacancies was investigated using Raman spectro...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-05-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379722002108 |
| _version_ | 1819022410882482176 |
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| author | Porntip Siriya Narong Chanlek Pornjuk Srepusharawoot Prasit Thongbai |
| author_facet | Porntip Siriya Narong Chanlek Pornjuk Srepusharawoot Prasit Thongbai |
| author_sort | Porntip Siriya |
| collection | DOAJ |
| description | The dielectric properties of TiO2 triple–doped with Al3+/Sc3+/Nb5+ (ASNTO) prepared by a conventional mixed route were studied. Pure rutile–TiO2, highly dense microstructure and all elements homogeneously dispersed were observed. The existence of oxygen vacancies was investigated using Raman spectroscopy. The Ti3+ ions and free–electrons in the structure were confirmed. The great improvement of the dielectric properties was obtained with high dielectric constant (ε′ > 104) and low loss (tanδ < 0.03). Furthermore, the temperature coefficient of ε′ was less than ±15% over the temperature range from −60 to 210 °C. Interestingly, at 210 °C, a low tanδ ∼ 0.05 was also obtained. Furthermore, the ε′ value was slightly dependent on the DC bias filed up to 25 V⋅mm−1. The ASNTO was electrically homogeneous, which consisted of the insulating and semiconducting parts. The obtained dielectric properties were mainly caused by the interfacial polarization. The low tanδ and narrow temperature coefficient of ε′ could be described by an ultra–high resistance of the insulating parts. |
| first_indexed | 2024-12-21T04:22:34Z |
| format | Article |
| id | doaj.art-d72ee16cd62445199c0a1022470822e0 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-12-21T04:22:34Z |
| publishDate | 2022-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-d72ee16cd62445199c0a1022470822e02022-12-21T19:16:08ZengElsevierResults in Physics2211-37972022-05-0136105458Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2Porntip Siriya0Narong Chanlek1Pornjuk Srepusharawoot2Prasit Thongbai3Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, ThailandSynchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Khon Kaen University, Khon Kaen 40002, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Khon Kaen University, Khon Kaen 40002, Thailand; Corresponding author at: Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand.The dielectric properties of TiO2 triple–doped with Al3+/Sc3+/Nb5+ (ASNTO) prepared by a conventional mixed route were studied. Pure rutile–TiO2, highly dense microstructure and all elements homogeneously dispersed were observed. The existence of oxygen vacancies was investigated using Raman spectroscopy. The Ti3+ ions and free–electrons in the structure were confirmed. The great improvement of the dielectric properties was obtained with high dielectric constant (ε′ > 104) and low loss (tanδ < 0.03). Furthermore, the temperature coefficient of ε′ was less than ±15% over the temperature range from −60 to 210 °C. Interestingly, at 210 °C, a low tanδ ∼ 0.05 was also obtained. Furthermore, the ε′ value was slightly dependent on the DC bias filed up to 25 V⋅mm−1. The ASNTO was electrically homogeneous, which consisted of the insulating and semiconducting parts. The obtained dielectric properties were mainly caused by the interfacial polarization. The low tanδ and narrow temperature coefficient of ε′ could be described by an ultra–high resistance of the insulating parts.http://www.sciencedirect.com/science/article/pii/S2211379722002108TiO2Giant/colossal dielectric propertiesLoss tangentImpedance spectroscopyX9R capacitors |
| spellingShingle | Porntip Siriya Narong Chanlek Pornjuk Srepusharawoot Prasit Thongbai Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 Results in Physics TiO2 Giant/colossal dielectric properties Loss tangent Impedance spectroscopy X9R capacitors |
| title | Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 |
| title_full | Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 |
| title_fullStr | Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 |
| title_full_unstemmed | Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 |
| title_short | Excellent giant dielectric properties over wide temperatures of (Al, Sc)3+ and Nb5+ doped TiO2 |
| title_sort | excellent giant dielectric properties over wide temperatures of al sc 3 and nb5 doped tio2 |
| topic | TiO2 Giant/colossal dielectric properties Loss tangent Impedance spectroscopy X9R capacitors |
| url | http://www.sciencedirect.com/science/article/pii/S2211379722002108 |
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