Fabrication of Si-Ge Nanowires
Different compositions of Si-Ge nanowires (SGNWs) have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst with different SiCl4: GeCl4 ratios and temperatures respectively. The SEM results show that the SGNWs could be grown successfully vertical on the surface of the sili...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National University of Sciences and Technology, Islamabad
2010-12-01
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| Series: | NUST Journal of Engineering Sciences |
| Online Access: | https://journals.nust.edu.pk/index.php/njes/article/view/15 |
| _version_ | 1827980458055434240 |
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| author | Aqeel Ahmed Shah Zhongyi Guo Ali Dad Chandio Yanjun Xiao Sangwon Jee S. A. Moiz Qurban A. Shah Jung -Ho Lee |
| author_facet | Aqeel Ahmed Shah Zhongyi Guo Ali Dad Chandio Yanjun Xiao Sangwon Jee S. A. Moiz Qurban A. Shah Jung -Ho Lee |
| author_sort | Aqeel Ahmed Shah |
| collection | DOAJ |
| description | Different compositions of Si-Ge nanowires (SGNWs) have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst with different SiCl4: GeCl4 ratios and temperatures respectively. The SEM results show that the SGNWs could be grown successfully vertical on the surface of the silicon with temperatures of 1000oC, 950oC, 900oC and 850oC. But for 900oC and 850oC, some of the NWs were observed to be grown as flower like structures instead of vertical. The growth rates are observed to be depending upon the ratio and the flowing times of the precursors greatly. For equal ratio of precursors (SiCl4: GeCl4=1:1) and the precursors’ flowing times of 5 min and 10 min, the growth rates of the SGNWs were observed to be around 20um/min and 30um/min respectively. The SEM results showed that the SGNWs could be grown successfully, vertical on the surface of the silicon with varying temperatures. Keywords: SiGe Nanowire, growth rate, optical characteristics. |
| first_indexed | 2024-04-09T21:53:34Z |
| format | Article |
| id | doaj.art-d7471dfaf6db4650ab04a8b656aed054 |
| institution | Directory Open Access Journal |
| issn | 2070-9900 2411-6319 |
| language | English |
| last_indexed | 2024-04-09T21:53:34Z |
| publishDate | 2010-12-01 |
| publisher | National University of Sciences and Technology, Islamabad |
| record_format | Article |
| series | NUST Journal of Engineering Sciences |
| spelling | doaj.art-d7471dfaf6db4650ab04a8b656aed0542023-03-24T11:42:12ZengNational University of Sciences and Technology, IslamabadNUST Journal of Engineering Sciences2070-99002411-63192010-12-013110.24949/njes.v3i1.15Fabrication of Si-Ge NanowiresAqeel Ahmed ShahZhongyi GuoAli Dad ChandioYanjun XiaoSangwon JeeS. A. MoizQurban A. ShahJung -Ho LeeDifferent compositions of Si-Ge nanowires (SGNWs) have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst with different SiCl4: GeCl4 ratios and temperatures respectively. The SEM results show that the SGNWs could be grown successfully vertical on the surface of the silicon with temperatures of 1000oC, 950oC, 900oC and 850oC. But for 900oC and 850oC, some of the NWs were observed to be grown as flower like structures instead of vertical. The growth rates are observed to be depending upon the ratio and the flowing times of the precursors greatly. For equal ratio of precursors (SiCl4: GeCl4=1:1) and the precursors’ flowing times of 5 min and 10 min, the growth rates of the SGNWs were observed to be around 20um/min and 30um/min respectively. The SEM results showed that the SGNWs could be grown successfully, vertical on the surface of the silicon with varying temperatures. Keywords: SiGe Nanowire, growth rate, optical characteristics.https://journals.nust.edu.pk/index.php/njes/article/view/15 |
| spellingShingle | Aqeel Ahmed Shah Zhongyi Guo Ali Dad Chandio Yanjun Xiao Sangwon Jee S. A. Moiz Qurban A. Shah Jung -Ho Lee Fabrication of Si-Ge Nanowires NUST Journal of Engineering Sciences |
| title | Fabrication of Si-Ge Nanowires |
| title_full | Fabrication of Si-Ge Nanowires |
| title_fullStr | Fabrication of Si-Ge Nanowires |
| title_full_unstemmed | Fabrication of Si-Ge Nanowires |
| title_short | Fabrication of Si-Ge Nanowires |
| title_sort | fabrication of si ge nanowires |
| url | https://journals.nust.edu.pk/index.php/njes/article/view/15 |
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