Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)
A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n+ Si substrat...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4867090 |
| _version_ | 1828769192680095744 |
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| author | N. Kurose K. Shibano T. Araki Y. Aoyagi |
| author_facet | N. Kurose K. Shibano T. Araki Y. Aoyagi |
| author_sort | N. Kurose |
| collection | DOAJ |
| description | A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n+ Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH3 and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process. |
| first_indexed | 2024-12-11T13:44:10Z |
| format | Article |
| id | doaj.art-d74d570b549742bb91982db2ccf6ea23 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T13:44:10Z |
| publishDate | 2014-02-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d74d570b549742bb91982db2ccf6ea232022-12-22T01:04:38ZengAIP Publishing LLCAIP Advances2158-32262014-02-0142027122027122-610.1063/1.4867090024402ADVDevelopment of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)N. Kurose0K. Shibano1T. Araki2Y. Aoyagi3The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577, JapanDepartment of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577, JapanDepartment of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577, JapanThe Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577, JapanA vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n+ Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH3 and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.http://dx.doi.org/10.1063/1.4867090 |
| spellingShingle | N. Kurose K. Shibano T. Araki Y. Aoyagi Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) AIP Advances |
| title | Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) |
| title_full | Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) |
| title_fullStr | Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) |
| title_full_unstemmed | Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) |
| title_short | Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) |
| title_sort | development of substrate removal free vertical ultraviolet light emitting diode refv led |
| url | http://dx.doi.org/10.1063/1.4867090 |
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