Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution
Carbide-derived carbons (CDCs) are a growing class of nanostructured carbon materials with properties that are desirable for many applications, ranging from electrical energy to gas storage. However, the synthesis of CDCs often requires high temperatures and/or pressures, as well as toxic chemicals....
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2016-10-01
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| Series: | Green Processing and Synthesis |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/gps-2016-0020 |
| _version_ | 1819023354820034560 |
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| author | Cao Tuan Anh Luong Truc Quynh Ngan Dao Tran Cao |
| author_facet | Cao Tuan Anh Luong Truc Quynh Ngan Dao Tran Cao |
| author_sort | Cao Tuan Anh |
| collection | DOAJ |
| description | Carbide-derived carbons (CDCs) are a growing class of nanostructured carbon materials with properties that are desirable for many applications, ranging from electrical energy to gas storage. However, the synthesis of CDCs often requires high temperatures and/or pressures, as well as toxic chemicals. In this report, we demonstrate environmentally friendly synthesis of a carbon-rich layer on the surface of SiC by anodic etching at room temperature in a highly diluted solution of hydrofluoric acid in ethylene glycol. In our opinion, the carbon-rich layer was formed thanks to the fact that we have used the etching conditions in which the rate of removal of carbon from SiC has become significantly lower compared with the silicon removal rate. More specifically, we have created an environment for SiC anodic etching where there is little water. In such conditions, silicon is still being removed from SiC, thanks to the direct dissolution, whereas the carbon removal rate is significantly reduced, due to the fact that carbon can be lost only by oxidation, but there is not enough water to oxidize carbon as in solutions with plenty of water. Thus, a carbon-rich layer is created on the etched SiC surface. |
| first_indexed | 2024-12-21T04:37:34Z |
| format | Article |
| id | doaj.art-d76c18cdf073413b80a6b7b87450f6b8 |
| institution | Directory Open Access Journal |
| issn | 2191-9542 2191-9550 |
| language | English |
| last_indexed | 2024-12-21T04:37:34Z |
| publishDate | 2016-10-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Green Processing and Synthesis |
| spelling | doaj.art-d76c18cdf073413b80a6b7b87450f6b82022-12-21T19:15:49ZengDe GruyterGreen Processing and Synthesis2191-95422191-95502016-10-015549149810.1515/gps-2016-0020Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solutionCao Tuan Anh0Luong Truc Quynh Ngan1Dao Tran Cao2Tan Trao University, Km6 Trung Mon Commune, Yen Son District, Tuyen Quang Province, Viet NamInstitute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Viet NamInstitute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi, Viet NamCarbide-derived carbons (CDCs) are a growing class of nanostructured carbon materials with properties that are desirable for many applications, ranging from electrical energy to gas storage. However, the synthesis of CDCs often requires high temperatures and/or pressures, as well as toxic chemicals. In this report, we demonstrate environmentally friendly synthesis of a carbon-rich layer on the surface of SiC by anodic etching at room temperature in a highly diluted solution of hydrofluoric acid in ethylene glycol. In our opinion, the carbon-rich layer was formed thanks to the fact that we have used the etching conditions in which the rate of removal of carbon from SiC has become significantly lower compared with the silicon removal rate. More specifically, we have created an environment for SiC anodic etching where there is little water. In such conditions, silicon is still being removed from SiC, thanks to the direct dissolution, whereas the carbon removal rate is significantly reduced, due to the fact that carbon can be lost only by oxidation, but there is not enough water to oxidize carbon as in solutions with plenty of water. Thus, a carbon-rich layer is created on the etched SiC surface.https://doi.org/10.1515/gps-2016-0020anodic etchingcarbide-derived carbonsethylene glycolhfsic |
| spellingShingle | Cao Tuan Anh Luong Truc Quynh Ngan Dao Tran Cao Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution Green Processing and Synthesis anodic etching carbide-derived carbons ethylene glycol hf sic |
| title | Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution |
| title_full | Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution |
| title_fullStr | Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution |
| title_full_unstemmed | Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution |
| title_short | Green synthesis of a carbon-rich layer on the surface of SiC at room temperature by anodic etching in dilute hydrofluoric acid/ethylene glycol solution |
| title_sort | green synthesis of a carbon rich layer on the surface of sic at room temperature by anodic etching in dilute hydrofluoric acid ethylene glycol solution |
| topic | anodic etching carbide-derived carbons ethylene glycol hf sic |
| url | https://doi.org/10.1515/gps-2016-0020 |
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