Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations
Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4931998 |
| _version_ | 1818219047044513792 |
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| author | Zongyuan Fu Jianchi Zhang Junhui Weng Weibo Chen Yulong Jiang Guodong Zhu |
| author_facet | Zongyuan Fu Jianchi Zhang Junhui Weng Weibo Chen Yulong Jiang Guodong Zhu |
| author_sort | Zongyuan Fu |
| collection | DOAJ |
| description | Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed. |
| first_indexed | 2024-12-12T07:33:26Z |
| format | Article |
| id | doaj.art-d79681296ae441aa9895e2af49670f04 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-12T07:33:26Z |
| publishDate | 2015-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d79681296ae441aa9895e2af49670f042022-12-22T00:32:58ZengAIP Publishing LLCAIP Advances2158-32262015-09-0159097211097211-910.1063/1.4931998084509ADVPiezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurationsZongyuan Fu0Jianchi Zhang1Junhui Weng2Weibo Chen3Yulong Jiang4Guodong Zhu5Department of Materials Science, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaDepartment of Materials Science, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaDepartment of Materials Science, Fudan University, Shanghai, ChinaFerroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.http://dx.doi.org/10.1063/1.4931998 |
| spellingShingle | Zongyuan Fu Jianchi Zhang Junhui Weng Weibo Chen Yulong Jiang Guodong Zhu Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations AIP Advances |
| title | Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| title_full | Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| title_fullStr | Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| title_full_unstemmed | Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| title_short | Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| title_sort | piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations |
| url | http://dx.doi.org/10.1063/1.4931998 |
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