Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be determined how gate control, including threshold...

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Dades bibliogràfiques
Autors principals: Yuh-Chen Lin, Felicia McGuire, Steven Noyce, Nicholas Williams, Zhihui Cheng, Joseph Andrews, Aaron D. Franklin
Format: Article
Idioma:English
Publicat: IEEE 2019-01-01
Col·lecció:IEEE Journal of the Electron Devices Society
Matèries:
Negative capacitance
two-dimensional
2D
NC
2D FET
NC-FET
Accés en línia:https://ieeexplore.ieee.org/document/8735840/

Internet

https://ieeexplore.ieee.org/document/8735840/

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