Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device
Abstract The immense increase of unstructured data require novel computing systems that can process the input data with low power and parallel processing. This functionality is similar to that of human brains that are composed of numerous neurons, synapses, and their complex connections. To mimic th...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-08-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300165 |
| _version_ | 1797745365568454656 |
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| author | Hyun Kyu Seo Jin Joo Ryu Su Yeon Lee Kanghyoek Jeon Hyunchul Sohn Gun Hwan Kim Min Kyu Yang |
| author_facet | Hyun Kyu Seo Jin Joo Ryu Su Yeon Lee Kanghyoek Jeon Hyunchul Sohn Gun Hwan Kim Min Kyu Yang |
| author_sort | Hyun Kyu Seo |
| collection | DOAJ |
| description | Abstract The immense increase of unstructured data require novel computing systems that can process the input data with low power and parallel processing. This functionality is similar to that of human brains that are composed of numerous neurons, synapses, and their complex connections. To mimic the functionality of the human brain with an electronic device, the resistive switching device and crossbar array has attracted considerable attention for artificial synaptic devices and integrated systems, respectively. For this purpose, the self‐rectifying resistive switching cell based on the Si:ZrOx thin film is developed and its reliability characteristics are tested. Four achievements are highlighted in this study. 1) The retention characteristic is improved by the adoption of TaOx thin film as an oxygen reservoir layer. 2) The asymmetric electrodes can make the self‐rectifying resistive cell (SRC) have sufficient rectifying characteristic. 3) The linearity of conductance update has a dominant effect on the inference performance compared to that of the conductance range variation. 4) The device of the interface‐type resistive switching shows a high enough device yield in the crossbar array device and exhibits reliable multiply‐and‐accumulate operations in the crossbar array to mimic the human brain‐inspired computing system. |
| first_indexed | 2024-03-12T15:22:13Z |
| format | Article |
| id | doaj.art-d7c32e4807a34a36a0dc3fc2f026774c |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T15:22:13Z |
| publishDate | 2023-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-d7c32e4807a34a36a0dc3fc2f026774c2023-08-11T02:16:17ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-08-0198n/an/a10.1002/aelm.202300165Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching DeviceHyun Kyu Seo0Jin Joo Ryu1Su Yeon Lee2Kanghyoek Jeon3Hyunchul Sohn4Gun Hwan Kim5Min Kyu Yang6Intelligent Electronic Device LabSahmyook University815 Hwarang‐ro, Nowon‐guSeoul01795Republic of KoreaDepartment of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of KoreaIntelligent Electronic Device LabSahmyook University815 Hwarang‐ro, Nowon‐guSeoul01795Republic of KoreaDivision of Advanced MaterialsKorea Research Institute of Chemical Technology (KRICT) 141 Gajeong‐RoYuseong‐guDaejeon34114Republic of KoreaDepartment of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of KoreaDepartment of System Semiconductor EngineeringYonsei UniversitySeoul03722Republic of KoreaIntelligent Electronic Device LabSahmyook University815 Hwarang‐ro, Nowon‐guSeoul01795Republic of KoreaAbstract The immense increase of unstructured data require novel computing systems that can process the input data with low power and parallel processing. This functionality is similar to that of human brains that are composed of numerous neurons, synapses, and their complex connections. To mimic the functionality of the human brain with an electronic device, the resistive switching device and crossbar array has attracted considerable attention for artificial synaptic devices and integrated systems, respectively. For this purpose, the self‐rectifying resistive switching cell based on the Si:ZrOx thin film is developed and its reliability characteristics are tested. Four achievements are highlighted in this study. 1) The retention characteristic is improved by the adoption of TaOx thin film as an oxygen reservoir layer. 2) The asymmetric electrodes can make the self‐rectifying resistive cell (SRC) have sufficient rectifying characteristic. 3) The linearity of conductance update has a dominant effect on the inference performance compared to that of the conductance range variation. 4) The device of the interface‐type resistive switching shows a high enough device yield in the crossbar array device and exhibits reliable multiply‐and‐accumulate operations in the crossbar array to mimic the human brain‐inspired computing system.https://doi.org/10.1002/aelm.202300165artificial synapsescrossbar arraysinferenceresistive switchingself‐rectifying |
| spellingShingle | Hyun Kyu Seo Jin Joo Ryu Su Yeon Lee Kanghyoek Jeon Hyunchul Sohn Gun Hwan Kim Min Kyu Yang Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device Advanced Electronic Materials artificial synapses crossbar arrays inference resistive switching self‐rectifying |
| title | Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
| title_full | Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
| title_fullStr | Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
| title_full_unstemmed | Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
| title_short | Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device |
| title_sort | analogue artificial synaptic performance of self rectifying resistive switching device |
| topic | artificial synapses crossbar arrays inference resistive switching self‐rectifying |
| url | https://doi.org/10.1002/aelm.202300165 |
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