Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time
Abstract The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unpreceden...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-06-01
|
Series: | Advanced Electronic Materials |
Subjects: | |
Online Access: | https://doi.org/10.1002/aelm.202201104 |