| Summary: | Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.
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