Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics
Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300621 |
| _version_ | 1797294364549971968 |
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| author | Daobing Zeng Rongxiang Ding Guanyu Liu Huihui Lu Miao Zhang Zhongying Xue Ziao Tian Zengfeng Di |
| author_facet | Daobing Zeng Rongxiang Ding Guanyu Liu Huihui Lu Miao Zhang Zhongying Xue Ziao Tian Zengfeng Di |
| author_sort | Daobing Zeng |
| collection | DOAJ |
| description | Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems. |
| first_indexed | 2024-03-07T21:29:10Z |
| format | Article |
| id | doaj.art-d7e416549bbf49608a38924cdca7a8d2 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-07T21:29:10Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-d7e416549bbf49608a38924cdca7a8d22024-02-27T04:06:06ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-02-01102n/an/a10.1002/aelm.202300621Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional ElectronicsDaobing Zeng0Rongxiang Ding1Guanyu Liu2Huihui Lu3Miao Zhang4Zhongying Xue5Ziao Tian6Zengfeng Di7National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaAbstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable multifunctional devices. Despite the numerous previous reports that have integrated various functions in a single 2D heterostructures device, most of those devices are based on a complex multilayer heterostructure or an air‐unstable channel material, limiting their ability to be applied in integrated circuits. There is an urgent need to develop 2D reconfigurable multifunctional devices that have a simple structure and stable electrical properties. In this work, a side‐gate reconfigurable device is illustrated based on simple BN‐MoS2 vdW heterostructures. Three different functions in a single device have been achieved, including a diode, double‐side‐gate reconfigurable logic transistor, and top floating gate memory. A lateral n+‐n homojunction is created along the MoS2 channel and the rectification ratio is above 105. Reconfigurable logic operations (OR, AND) can be achieved in a single double‐side‐gate device and the current on/off ratio is ≈t 104. Moreover, the device can act as a floating gate memory under back gate operation. Those results pave the way for integrating the same reconfigurable multifunctional devices to realize complex electronic systems.https://doi.org/10.1002/aelm.202300621floating gate memoryMoS2reconfigurable transistorrectificationside gate |
| spellingShingle | Daobing Zeng Rongxiang Ding Guanyu Liu Huihui Lu Miao Zhang Zhongying Xue Ziao Tian Zengfeng Di Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics Advanced Electronic Materials floating gate memory MoS2 reconfigurable transistor rectification side gate |
| title | Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics |
| title_full | Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics |
| title_fullStr | Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics |
| title_full_unstemmed | Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics |
| title_short | Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics |
| title_sort | side gate bn mos2 transistor for reconfigurable multifunctional electronics |
| topic | floating gate memory MoS2 reconfigurable transistor rectification side gate |
| url | https://doi.org/10.1002/aelm.202300621 |
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