Ultra Low Power High Speed Domino Logic Circuit by Using FinFET Technology
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultra deep sub-micron (UDSM) technology. To overcome from this situation double gate device like FinFET is used which has excellent control over the thin silicon fins with two electrically coupled gate, w...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2016-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/1538 |