Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film
In order to achieve high quantum efficiency of AlGaN-based deep ultraviolet light-emitting diodes (UVC-LED), it is important to improve the light extraction efficiency (LEE). In this paper, theoretical simulation and experiment of SiO<sub>2</sub> anti-reflective film deposited on UVC-LED...
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MDPI AG
2022-06-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/7/928 |
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| author | Yu Wang Zhenxing Lv Shengli Qi Yazhu Liu Hao Long |
| author_facet | Yu Wang Zhenxing Lv Shengli Qi Yazhu Liu Hao Long |
| author_sort | Yu Wang |
| collection | DOAJ |
| description | In order to achieve high quantum efficiency of AlGaN-based deep ultraviolet light-emitting diodes (UVC-LED), it is important to improve the light extraction efficiency (LEE). In this paper, theoretical simulation and experiment of SiO<sub>2</sub> anti-reflective film deposited on UVC-LED were investigated. The effect of different SiO<sub>2</sub> thickness on the light extraction efficiency of 275 nm UVC-LED was studied, showing that 140 nm SiO<sub>2</sub> anti-reflective film can effectively improve the light output power of UVC-LED by more than 5.5%, which were also confirmed by the TFCALC simulation. The enhancement of UVC-LED light extraction efficiency by this antireflective film is mainly due to the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfrac bevelled="true"><mrow><mn>3</mn><mi mathvariant="sans-serif">λ</mi></mrow><mn>2</mn></mfrac></mrow></semantics></math></inline-formula> light coherent effect at the SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interface. Our work proved the promising application of antireflective coating on UVC-LED. |
| first_indexed | 2024-03-09T03:33:59Z |
| format | Article |
| id | doaj.art-d813e8c0e2034477977ce559a793f735 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T03:33:59Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-d813e8c0e2034477977ce559a793f7352023-12-03T14:52:18ZengMDPI AGCrystals2073-43522022-06-0112792810.3390/cryst12070928Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective FilmYu Wang0Zhenxing Lv1Shengli Qi2Yazhu Liu3Hao Long4Hangzhou Hikvision Digital Technology Co., Ltd., Hangzhou 310051, ChinaNingbo ANN Semiconductor Co., Ltd., Ningbo 315336, ChinaNingbo ANN Semiconductor Co., Ltd., Ningbo 315336, ChinaNingbo ANN Semiconductor Co., Ltd., Ningbo 315336, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen 361005, ChinaIn order to achieve high quantum efficiency of AlGaN-based deep ultraviolet light-emitting diodes (UVC-LED), it is important to improve the light extraction efficiency (LEE). In this paper, theoretical simulation and experiment of SiO<sub>2</sub> anti-reflective film deposited on UVC-LED were investigated. The effect of different SiO<sub>2</sub> thickness on the light extraction efficiency of 275 nm UVC-LED was studied, showing that 140 nm SiO<sub>2</sub> anti-reflective film can effectively improve the light output power of UVC-LED by more than 5.5%, which were also confirmed by the TFCALC simulation. The enhancement of UVC-LED light extraction efficiency by this antireflective film is mainly due to the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mfrac bevelled="true"><mrow><mn>3</mn><mi mathvariant="sans-serif">λ</mi></mrow><mn>2</mn></mfrac></mrow></semantics></math></inline-formula> light coherent effect at the SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> interface. Our work proved the promising application of antireflective coating on UVC-LED.https://www.mdpi.com/2073-4352/12/7/928UVC-LEDlight extraction efficiencyantireflective filmoptical simulationSiO<sub>2</sub> |
| spellingShingle | Yu Wang Zhenxing Lv Shengli Qi Yazhu Liu Hao Long Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film Crystals UVC-LED light extraction efficiency antireflective film optical simulation SiO<sub>2</sub> |
| title | Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film |
| title_full | Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film |
| title_fullStr | Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film |
| title_full_unstemmed | Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film |
| title_short | Enhancement of Light Extraction Efficiency of UVC-LED by SiO<sub>2</sub> Antireflective Film |
| title_sort | enhancement of light extraction efficiency of uvc led by sio sub 2 sub antireflective film |
| topic | UVC-LED light extraction efficiency antireflective film optical simulation SiO<sub>2</sub> |
| url | https://www.mdpi.com/2073-4352/12/7/928 |
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