Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1T-TaS2
Abstract The electronic evolution of doped Mott insulators has been extensively studied for decades in search of exotic physical phases. The proposed Mott insulator 1T-TaS2 provides an intriguing platform to study the electronic evolution via doping. Here we apply scanning tunneling microscopy (STM)...
| Những tác giả chính: | , , , , , , , , , , , , |
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| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
Nature Portfolio
2022-01-01
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| Loạt: | npj Quantum Materials |
| Truy cập trực tuyến: | https://doi.org/10.1038/s41535-021-00415-5 |
| Tóm tắt: | Abstract The electronic evolution of doped Mott insulators has been extensively studied for decades in search of exotic physical phases. The proposed Mott insulator 1T-TaS2 provides an intriguing platform to study the electronic evolution via doping. Here we apply scanning tunneling microscopy (STM) to study the evolution in Ti-doped 1T-TaS2 at different doping levels. The doping Ti atom locally perturbs the electronic and spin state inside the doped star of David and induces a clover-shaped orbital texture at low-doping levels (x < 0.01). The insulator to metal transition occurs around a critical point x = 0.01, in which small metallic and large insulating domains coexist. The clover-shaped orbital texture emerges at a broader energy range, revealing a competition with the electron correlation. It transforms to a disorder-induced Anderson insulating behavior as doping increases. We directly visualize the trapped electrons in d I/d V conductance maps. The comprehensive study of the series of Ti-doped 1T-TaS2 deepens our understanding of the electronic state evolution in a doped strong-correlated system. |
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| số ISSN: | 2397-4648 |