Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band
The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (&#...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9763384/ |
| _version_ | 1818232116304936960 |
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| author | Jia Xu Brian Sia Xiang Li Jiawei Wang Wanjun Wang Zhongliang Qiao Xin Guo Chee Wei Lee Ashesh Sasidharan S. Gunasagar Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_facet | Jia Xu Brian Sia Xiang Li Jiawei Wang Wanjun Wang Zhongliang Qiao Xin Guo Chee Wei Lee Ashesh Sasidharan S. Gunasagar Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang |
| author_sort | Jia Xu Brian Sia |
| collection | DOAJ |
| description | The key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ<sup>(2)</sup>). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek. |
| first_indexed | 2024-12-12T11:01:10Z |
| format | Article |
| id | doaj.art-d857ec08d1f7423bab9726c960426494 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-12T11:01:10Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-d857ec08d1f7423bab9726c9604264942022-12-22T00:26:32ZengIEEEIEEE Photonics Journal1943-06552022-01-011431910.1109/JPHOT.2022.31703669763384Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-BandJia Xu Brian Sia0https://orcid.org/0000-0003-4494-8293Xiang Li1Jiawei Wang2https://orcid.org/0000-0003-4043-4113Wanjun Wang3Zhongliang Qiao4https://orcid.org/0000-0002-3923-4029Xin Guo5Chee Wei Lee6https://orcid.org/0000-0001-8274-0333Ashesh Sasidharan7https://orcid.org/0000-0002-0277-5649S. Gunasagar8Callum G. Littlejohns9https://orcid.org/0000-0002-7101-0447Chongyang Liu10https://orcid.org/0000-0001-8045-2944Graham T. Reed11Kian Siong Ang12Hong Wang13https://orcid.org/0000-0002-2183-6865CompoundTek, SingaporeTemasek Laboratories@NTU(TL@NTU), Nanyang Technological University, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeCompoundTek, SingaporeCompoundTek, SingaporeCompoundTek, SingaporeOptoelectronics Research Centre, University of Southampton, Southampton, U.K.Temasek Laboratories@NTU(TL@NTU), Nanyang Technological University, SingaporeOptoelectronics Research Centre, University of Southampton, Southampton, U.K.CompoundTek, SingaporeSchool of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeThe key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ<sup>(2)</sup>). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek.https://ieeexplore.ieee.org/document/9763384/Modulatorphotodetectorphotonic integrated circuitssilicon photonicswafer-level platformwaveguide |
| spellingShingle | Jia Xu Brian Sia Xiang Li Jiawei Wang Wanjun Wang Zhongliang Qiao Xin Guo Chee Wei Lee Ashesh Sasidharan S. Gunasagar Callum G. Littlejohns Chongyang Liu Graham T. Reed Kian Siong Ang Hong Wang Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band IEEE Photonics Journal Modulator photodetector photonic integrated circuits silicon photonics wafer-level platform waveguide |
| title | Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band |
| title_full | Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band |
| title_fullStr | Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band |
| title_full_unstemmed | Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band |
| title_short | Wafer-Scale Demonstration of Low-Loss (∼0.43 dB/cm), High-Bandwidth (>38 GHz), Silicon Photonics Platform Operating at the C-Band |
| title_sort | wafer scale demonstration of low loss x223c 0 43 db x002f cm high bandwidth gt 38 ghz silicon photonics platform operating at the c band |
| topic | Modulator photodetector photonic integrated circuits silicon photonics wafer-level platform waveguide |
| url | https://ieeexplore.ieee.org/document/9763384/ |
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