An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the p...

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Bibliographic Details
Main Authors: Zebin Xu, Jiahui Yan, Meilin Ji, Yongxin Zhou, Dandan Wang, Yuanzhi Wang, Zhihong Mai, Xuefeng Zhao, Tianxiang Nan, Guozhong Xing, Songsong Zhang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Micromachines
Subjects:
high-sensitivity
low temperature drift
piezoresistive effect
silicon-on-insulator (SOI) pressure sensor
microelectromechanical systems (MEMS)
Online Access:https://www.mdpi.com/2072-666X/13/12/2250

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https://www.mdpi.com/2072-666X/13/12/2250

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