Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique
Utilising a pulse laser deposition technique, 1.0 wt.% tungsten-doped zinc oxide (WZO) films were fabricated under different growth temperatures (200–400 °C), and their structural, optical, morphological, and electrical properties were discussed. The crystalline structures of the WZO target and film...
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MDPI AG
2022-07-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/12/8/1032 |
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| author | Po-Chuan Pan Horng-Show Koo De-Xuan Chen Chien-Ming Chen |
| author_facet | Po-Chuan Pan Horng-Show Koo De-Xuan Chen Chien-Ming Chen |
| author_sort | Po-Chuan Pan |
| collection | DOAJ |
| description | Utilising a pulse laser deposition technique, 1.0 wt.% tungsten-doped zinc oxide (WZO) films were fabricated under different growth temperatures (200–400 °C), and their structural, optical, morphological, and electrical properties were discussed. The crystalline structures of the WZO target and films were examined by X-ray diffraction (XRD) analysis, and preferred orientations along the strong c-axis (002) were strongly observed for all growth temperatures. All WZO films demonstrated transparencies above 75%, along with a wide spectral range (400–700 nm). Their bandgap values ranged between 3.21 and 3.35 eV and their optimised resistivity, which was significantly influenced by the growth temperature, was measured as 1.97 × 10<sup>−3</sup> Ω cm. Further, the electrical characteristics of the WZO films were investigated under different W-doping amounts (1.0–9.0 wt.%) and a constant growth temperature (300 °C), and the results indicated that the carrier mobility showed an opposite tendency to the W-doping percentage. In addition, the elemental compositions of the WZO films and pristine ZnO films were comparatively studied in terms of Zn, O, and W contents, via X-ray photoelectron spectroscopy (XPS) analysis. |
| first_indexed | 2024-03-09T13:38:31Z |
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| id | doaj.art-d8914d658e4a4daca2ee3608bf0bf8f4 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T13:38:31Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-d8914d658e4a4daca2ee3608bf0bf8f42023-11-30T21:10:09ZengMDPI AGCrystals2073-43522022-07-01128103210.3390/cryst12081032Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition TechniquePo-Chuan Pan0Horng-Show Koo1De-Xuan Chen2Chien-Ming Chen3College of Mechanical & Electrical Engineering, National Taipei University of Technology, Taipei 10608, TaiwanDepartment of Visual Communication Design, Innovative Design Colleague, Taipei University of Marine Technology, New Taipei 25172, TaiwanDepartment of Electro-Optical Engineering, Minghsin University Science and Technology, Xinfeng, Hsinchu 30401, TaiwanDepartment of Electro-Optical engineering, National Taipei University of Technology, Taipei 10608, TaiwanUtilising a pulse laser deposition technique, 1.0 wt.% tungsten-doped zinc oxide (WZO) films were fabricated under different growth temperatures (200–400 °C), and their structural, optical, morphological, and electrical properties were discussed. The crystalline structures of the WZO target and films were examined by X-ray diffraction (XRD) analysis, and preferred orientations along the strong c-axis (002) were strongly observed for all growth temperatures. All WZO films demonstrated transparencies above 75%, along with a wide spectral range (400–700 nm). Their bandgap values ranged between 3.21 and 3.35 eV and their optimised resistivity, which was significantly influenced by the growth temperature, was measured as 1.97 × 10<sup>−3</sup> Ω cm. Further, the electrical characteristics of the WZO films were investigated under different W-doping amounts (1.0–9.0 wt.%) and a constant growth temperature (300 °C), and the results indicated that the carrier mobility showed an opposite tendency to the W-doping percentage. In addition, the elemental compositions of the WZO films and pristine ZnO films were comparatively studied in terms of Zn, O, and W contents, via X-ray photoelectron spectroscopy (XPS) analysis.https://www.mdpi.com/2073-4352/12/8/1032tungsten-doped zinc oxide (WZO)pulse laser depositionbandgapphotoluminescence (PL)X-ray photoelectron spectroscopy (XPS) |
| spellingShingle | Po-Chuan Pan Horng-Show Koo De-Xuan Chen Chien-Ming Chen Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique Crystals tungsten-doped zinc oxide (WZO) pulse laser deposition bandgap photoluminescence (PL) X-ray photoelectron spectroscopy (XPS) |
| title | Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique |
| title_full | Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique |
| title_fullStr | Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique |
| title_full_unstemmed | Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique |
| title_short | Fabricating High-Conduction and High-Transparency Tungsten-Doped Zinc Oxide Films by Pulse Laser Deposition Technique |
| title_sort | fabricating high conduction and high transparency tungsten doped zinc oxide films by pulse laser deposition technique |
| topic | tungsten-doped zinc oxide (WZO) pulse laser deposition bandgap photoluminescence (PL) X-ray photoelectron spectroscopy (XPS) |
| url | https://www.mdpi.com/2073-4352/12/8/1032 |
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