Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub>
<p>Abstract</p> <p>In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs) embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. El...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/227 |
| _version_ | 1797761806134935552 |
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| author | Gardelis Spiros Manousiadis Pavlos Nassiopoulou Androula |
| author_facet | Gardelis Spiros Manousiadis Pavlos Nassiopoulou Androula |
| author_sort | Gardelis Spiros |
| collection | DOAJ |
| description | <p>Abstract</p> <p>In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs) embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.</p> |
| first_indexed | 2024-03-12T19:18:23Z |
| format | Article |
| id | doaj.art-d8e566ed5d7a4c859679cb003bdccd68 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:18:23Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-d8e566ed5d7a4c859679cb003bdccd682023-08-02T05:22:53ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161227Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub>Gardelis SpirosManousiadis PavlosNassiopoulou Androula<p>Abstract</p> <p>In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs) embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.</p>http://www.nanoscalereslett.com/content/6/1/227 |
| spellingShingle | Gardelis Spiros Manousiadis Pavlos Nassiopoulou Androula Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> Nanoscale Research Letters |
| title | Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> |
| title_full | Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> |
| title_fullStr | Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> |
| title_full_unstemmed | Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> |
| title_short | Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO<sub>2</sub> |
| title_sort | lateral electrical transport optical properties and photocurrent measurements in two dimensional arrays of silicon nanocrystals embedded in sio sub 2 sub |
| url | http://www.nanoscalereslett.com/content/6/1/227 |
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