The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the...
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Nature Portfolio
2017-05-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-02336-5 |
| _version_ | 1819036066758262784 |
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| author | Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park |
| author_facet | Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park |
| author_sort | Jozeph Park |
| collection | DOAJ |
| description | Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN +s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs. |
| first_indexed | 2024-12-21T07:59:37Z |
| format | Article |
| id | doaj.art-d8eedc00bdd94e3391f042da103c958d |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-21T07:59:37Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-d8eedc00bdd94e3391f042da103c958d2022-12-21T19:10:56ZengNature PortfolioScientific Reports2045-23222017-05-017111110.1038/s41598-017-02336-5The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device propertiesJozeph Park0Hyun-Jun Jeong1Hyun-Mo Lee2Ho-Hyun Nahm3Jin-Seong Park4Department of Materials Science and Engineering, KAISTDepartment of Materials Science and Engineering, Hanyang UniversityDepartment of Materials Science and Engineering, Hanyang UniversityCenter for Correlated Electron Systems, Institute for Basic Science (IBS)Department of Materials Science and Engineering, Hanyang UniversityAbstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN +s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs.https://doi.org/10.1038/s41598-017-02336-5 |
| spellingShingle | Jozeph Park Hyun-Jun Jeong Hyun-Mo Lee Ho-Hyun Nahm Jin-Seong Park The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties Scientific Reports |
| title | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties |
| title_full | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties |
| title_fullStr | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties |
| title_full_unstemmed | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties |
| title_short | The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties |
| title_sort | resonant interaction between anions or vacancies in znon semiconductors and their effects on thin film device properties |
| url | https://doi.org/10.1038/s41598-017-02336-5 |
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