Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping
In order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der...
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| Format: | Article |
| Language: | English |
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International Institute for the Science of Sintering, Beograd
2023-01-01
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| Series: | Science of Sintering |
| Subjects: | |
| Online Access: | https://doiserbia.nb.rs/img/doi/0350-820X/2023/0350-820X2301057P.pdf |
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| author | Požega Emina Vuković Nikola Gomidželović Lidija Janošević Miloš Jovanović Milenko Marjanović Saša Mitrović Milijana |
| author_facet | Požega Emina Vuković Nikola Gomidželović Lidija Janošević Miloš Jovanović Milenko Marjanović Saša Mitrović Milijana |
| author_sort | Požega Emina |
| collection | DOAJ |
| description | In order to study the effect of Zr doping on the thermoelectric properties
of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was
prepared by Bridgman method. Cut and cleaved samples from different regions
of ingot were characterized by a Hall Effect based on the Van der Pauw
method. The first measurements were conducted with four ohmic contacts at
room temperature and the obtained results were presented in our
investigation, earlier. Аlso, high charge carriers mobility was obtained on
the sample with silver contacts at the temperature of liquid nitrogen.
Single crystal was characterized by Seebeck coefficient (S), conductivity
(κ) and resistivity (ρ) measurements as а function of temperature in the
range of 40-320°C by a home-made impedance meter. The prepared single
crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C. |
| first_indexed | 2024-03-13T06:25:14Z |
| format | Article |
| id | doaj.art-d8fc80a5ab1e4068b93d0afd7b71ccd7 |
| institution | Directory Open Access Journal |
| issn | 0350-820X 1820-7413 |
| language | English |
| last_indexed | 2024-03-13T06:25:14Z |
| publishDate | 2023-01-01 |
| publisher | International Institute for the Science of Sintering, Beograd |
| record_format | Article |
| series | Science of Sintering |
| spelling | doaj.art-d8fc80a5ab1e4068b93d0afd7b71ccd72023-06-09T10:43:34ZengInternational Institute for the Science of Sintering, BeogradScience of Sintering0350-820X1820-74132023-01-01551577010.2298/SOS2301057P0350-820X2301057PImproving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr dopingPožega Emina0https://orcid.org/0000-0001-6797-2435Vuković Nikola1https://orcid.org/0000-0002-3607-5907Gomidželović Lidija2Janošević Miloš3Jovanović Milenko4Marjanović Saša5https://orcid.org/0000-0001-6930-2232Mitrović Milijana6Mining and Metallurgy Institute Bor, Bor, SerbiaMunicipality of Kladovo, Kladovo, SerbiaMining and Metallurgy Institute Bor, Bor, SerbiaMining and Metallurgy Institute Bor, Bor, SerbiaMining and Metallurgy Institute Bor, Bor, SerbiaUniversity of Belgrade, Technical Faculty Bor, Bor, SerbiaUniversity of Belgrade, Technical Faculty Bor, Bor, SerbiaIn order to study the effect of Zr doping on the thermoelectric properties of p-type Bi10.17Sb30.72 Zr0.35Te58.28Se0.48 single crystal, аn ingot was prepared by Bridgman method. Cut and cleaved samples from different regions of ingot were characterized by a Hall Effect based on the Van der Pauw method. The first measurements were conducted with four ohmic contacts at room temperature and the obtained results were presented in our investigation, earlier. Аlso, high charge carriers mobility was obtained on the sample with silver contacts at the temperature of liquid nitrogen. Single crystal was characterized by Seebeck coefficient (S), conductivity (κ) and resistivity (ρ) measurements as а function of temperature in the range of 40-320°C by a home-made impedance meter. The prepared single crystal has a figure of merit (Z) of 1.22 x 10-3 K-1 at 300°C.https://doiserbia.nb.rs/img/doi/0350-820X/2023/0350-820X2301057P.pdfhall effectthermoelectric propertiesbridgman methodsingle crystal |
| spellingShingle | Požega Emina Vuković Nikola Gomidželović Lidija Janošević Miloš Jovanović Milenko Marjanović Saša Mitrović Milijana Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping Science of Sintering hall effect thermoelectric properties bridgman method single crystal |
| title | Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping |
| title_full | Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping |
| title_fullStr | Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping |
| title_full_unstemmed | Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping |
| title_short | Improving thermoelectric properties of p-type (BiSb)2(TeSe)3 single crystal by Zr doping |
| title_sort | improving thermoelectric properties of p type bisb 2 tese 3 single crystal by zr doping |
| topic | hall effect thermoelectric properties bridgman method single crystal |
| url | https://doiserbia.nb.rs/img/doi/0350-820X/2023/0350-820X2301057P.pdf |
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