Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces
A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were ch...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5006881 |
| _version_ | 1819259817891463168 |
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| author | Daniele Gastaldo Gianluca Conta Marco Coïsson Giampiero Amato Paola Tiberto Paolo Allia |
| author_facet | Daniele Gastaldo Gianluca Conta Marco Coïsson Giampiero Amato Paola Tiberto Paolo Allia |
| author_sort | Daniele Gastaldo |
| collection | DOAJ |
| description | A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled – zero field cooled measurements. |
| first_indexed | 2024-12-23T19:16:02Z |
| format | Article |
| id | doaj.art-d90cb7ee69634cab989a04d19aa82a89 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T19:16:02Z |
| publishDate | 2018-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d90cb7ee69634cab989a04d19aa82a892022-12-21T17:34:19ZengAIP Publishing LLCAIP Advances2158-32262018-05-0185056414056414-610.1063/1.5006881141892ADVGrowth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfacesDaniele Gastaldo0Gianluca Conta1Marco Coïsson2Giampiero Amato3Paola Tiberto4Paolo Allia5Nanoscience and Materials division, Istituto Nazionale di Ricerca Metrologica, Torino 10135, ItalyNanoscience and Materials division, Istituto Nazionale di Ricerca Metrologica, Torino 10135, ItalyNanoscience and Materials division, Istituto Nazionale di Ricerca Metrologica, Torino 10135, ItalyNanoscience and Materials division, Istituto Nazionale di Ricerca Metrologica, Torino 10135, ItalyNanoscience and Materials division, Istituto Nazionale di Ricerca Metrologica, Torino 10135, ItalyApplied science and technology department, Polytechnic University of Turin, Torino 10129, ItalyA method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled – zero field cooled measurements.http://dx.doi.org/10.1063/1.5006881 |
| spellingShingle | Daniele Gastaldo Gianluca Conta Marco Coïsson Giampiero Amato Paola Tiberto Paolo Allia Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces AIP Advances |
| title | Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces |
| title_full | Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces |
| title_fullStr | Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces |
| title_full_unstemmed | Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces |
| title_short | Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces |
| title_sort | growth of room temperature ferromagnetic ge1 xmnx quantum dots on hydrogen passivated si 100 surfaces |
| url | http://dx.doi.org/10.1063/1.5006881 |
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