Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma
A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-07-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/10/7/619 |
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| author | Kyoung Jin Kim Kei Kamada Rikito Murakami Takahiko Horiai Shiori Ishikawa Vladimir V. Kochurikhin Masao Yoshino Akihiro Yamaji Yasuhiro Shoji Shunsuke Kurosawa Satoshi Toyoda Hiroki Sato Yuui Yokota Yuji Ohashi Akira Yoshikawa |
| author_facet | Kyoung Jin Kim Kei Kamada Rikito Murakami Takahiko Horiai Shiori Ishikawa Vladimir V. Kochurikhin Masao Yoshino Akihiro Yamaji Yasuhiro Shoji Shunsuke Kurosawa Satoshi Toyoda Hiroki Sato Yuui Yokota Yuji Ohashi Akira Yoshikawa |
| author_sort | Kyoung Jin Kim |
| collection | DOAJ |
| description | A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</sub>, and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>, with melting points of 2460, 2900, and 2840 °C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (μ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>. In the case of the μ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method. |
| first_indexed | 2024-03-10T18:27:08Z |
| format | Article |
| id | doaj.art-d991767803e64bb4865f0f55d89fede1 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T18:27:08Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-d991767803e64bb4865f0f55d89fede12023-11-20T06:58:09ZengMDPI AGCrystals2073-43522020-07-0110761910.3390/cryst10070619Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc PlasmaKyoung Jin Kim0Kei Kamada1Rikito Murakami2Takahiko Horiai3Shiori Ishikawa4Vladimir V. Kochurikhin5Masao Yoshino6Akihiro Yamaji7Yasuhiro Shoji8Shunsuke Kurosawa9Satoshi Toyoda10Hiroki Sato11Yuui Yokota12Yuji Ohashi13Akira Yoshikawa14New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanC&A Corporation, 1-16-23 Ichibancho, Aoba-ku, Sendai 980-0811, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanInstitute for Material Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanNew Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, JapanA novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu<sub>2</sub>O<sub>3</sub>, Lu<sub>0.388</sub>Hf<sub>0.612</sub>O<sub>1.806</sub>, and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>, with melting points of 2460, 2900, and 2840 °C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (μ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu<sub>2</sub>O<sub>3</sub> and Lu<sub>0.18</sub>Hf<sub>0.82</sub>O<sub>1.91</sub>. In the case of the μ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.https://www.mdpi.com/2073-4352/10/7/619single-crystal growthoxidescore heating methodhigh melting point materialsscintillators |
| spellingShingle | Kyoung Jin Kim Kei Kamada Rikito Murakami Takahiko Horiai Shiori Ishikawa Vladimir V. Kochurikhin Masao Yoshino Akihiro Yamaji Yasuhiro Shoji Shunsuke Kurosawa Satoshi Toyoda Hiroki Sato Yuui Yokota Yuji Ohashi Akira Yoshikawa Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma Crystals single-crystal growth oxides core heating method high melting point materials scintillators |
| title | Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma |
| title_full | Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma |
| title_fullStr | Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma |
| title_full_unstemmed | Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma |
| title_short | Growth of Lu<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> Based High Melting Temperature Single Crystals by Indirect Heating Method Using Arc Plasma |
| title_sort | growth of lu sub 2 sub o sub 3 sub and hfo sub 2 sub based high melting temperature single crystals by indirect heating method using arc plasma |
| topic | single-crystal growth oxides core heating method high melting point materials scintillators |
| url | https://www.mdpi.com/2073-4352/10/7/619 |
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