Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors
Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the pr...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-02-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/25/5/1081 |
| _version_ | 1828523032839192576 |
|---|---|
| author | Mohi Uddin Jewel Mahmuda Akter Monne Bhagyashree Mishra Maggie Yihong Chen |
| author_facet | Mohi Uddin Jewel Mahmuda Akter Monne Bhagyashree Mishra Maggie Yihong Chen |
| author_sort | Mohi Uddin Jewel |
| collection | DOAJ |
| description | Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS<sub>2</sub>) by multiple printing passes to construct a MoS<sub>2</sub>−NDG stack. We demonstrate top-gated fully inkjet-printed MoS<sub>2</sub>−NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO<sub>3</sub>) dielectric. A 100% inkjet-printed MoS<sub>2</sub>−NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches. |
| first_indexed | 2024-12-11T20:20:12Z |
| format | Article |
| id | doaj.art-d99db131098e4195bca2420e8fa965da |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-12-11T20:20:12Z |
| publishDate | 2020-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-d99db131098e4195bca2420e8fa965da2022-12-22T00:52:06ZengMDPI AGMolecules1420-30492020-02-01255108110.3390/molecules25051081molecules25051081Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio TransistorsMohi Uddin Jewel0Mahmuda Akter Monne1Bhagyashree Mishra2Maggie Yihong Chen3Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USAMaterials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USAMaterials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, USAIngram School of Engineering, Texas State University, San Marcos, TX 78666, USAFully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the printed 2D material TFTs. In the search for TFTs with high current ratios, we introduce a stable and efficient method of nitrogen-doped graphene (NDG) ink preparation for inkjet printing by liquid-phase exfoliation. The NDG thin film is print-stacked with molybdenum disulfide (MoS<sub>2</sub>) by multiple printing passes to construct a MoS<sub>2</sub>−NDG stack. We demonstrate top-gated fully inkjet-printed MoS<sub>2</sub>−NDG transistors with silver drain, source, and gate electrodes, and a barium titanate (BaTiO<sub>3</sub>) dielectric. A 100% inkjet-printed MoS<sub>2</sub>−NDG vertical 2D active heterostructure layer transistor with a current on/off ratio of 1200 is exhibited. The results may lead towards the development of all-printed 2D material-based transistor switches.https://www.mdpi.com/1420-3049/25/5/1081inkjet printinggraphenemolybdenum disulfideramanthin-filmscross-sectionnanosheetson/off ratiotransistor |
| spellingShingle | Mohi Uddin Jewel Mahmuda Akter Monne Bhagyashree Mishra Maggie Yihong Chen Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors Molecules inkjet printing graphene molybdenum disulfide raman thin-films cross-section nanosheets on/off ratio transistor |
| title | Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors |
| title_full | Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors |
| title_fullStr | Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors |
| title_full_unstemmed | Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors |
| title_short | Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors |
| title_sort | inkjet printed molybdenum disulfide and nitrogen doped graphene active layer high on off ratio transistors |
| topic | inkjet printing graphene molybdenum disulfide raman thin-films cross-section nanosheets on/off ratio transistor |
| url | https://www.mdpi.com/1420-3049/25/5/1081 |
| work_keys_str_mv | AT mohiuddinjewel inkjetprintedmolybdenumdisulfideandnitrogendopedgrapheneactivelayerhighonoffratiotransistors AT mahmudaaktermonne inkjetprintedmolybdenumdisulfideandnitrogendopedgrapheneactivelayerhighonoffratiotransistors AT bhagyashreemishra inkjetprintedmolybdenumdisulfideandnitrogendopedgrapheneactivelayerhighonoffratiotransistors AT maggieyihongchen inkjetprintedmolybdenumdisulfideandnitrogendopedgrapheneactivelayerhighonoffratiotransistors |