An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories

In this work we experimentally demonstrate a Si _3 N _4 photonic integrated circuit which offers row decoding and RAM addressing functionalities. The passive integrated structure comprises a MRR-based wavelength filtering bank scheme in a 2 × 4 configuration, which reveals a suppression ratio in the...

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Main Authors: S Simos, T Moschos, K Fotiadis, D Chatzitheocharis, T Alexoudi, C Vagionas, D Sacchetto, M Zervas, N Pleros
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:JPhys Photonics
Subjects:
Online Access:https://doi.org/10.1088/2515-7647/acf973
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author S Simos
T Moschos
K Fotiadis
D Chatzitheocharis
T Alexoudi
C Vagionas
D Sacchetto
M Zervas
N Pleros
author_facet S Simos
T Moschos
K Fotiadis
D Chatzitheocharis
T Alexoudi
C Vagionas
D Sacchetto
M Zervas
N Pleros
author_sort S Simos
collection DOAJ
description In this work we experimentally demonstrate a Si _3 N _4 photonic integrated circuit which offers row decoding and RAM addressing functionalities. The passive integrated structure comprises a MRR-based wavelength filtering bank scheme in a 2 × 4 configuration, which reveals a suppression ratio in the range of 12–25 dB. The performance of the optical circuit has been evaluated in a system-level testbed, where successful addressing in one RAM row has been achieved. Error-free operation has been accomplished for all cases under study, with the whole row decoder system’s performance to offer a total power penalty of 2.5 dB.
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spelling doaj.art-d9ccec65d910419fb27515de523f14f12023-10-03T09:30:24ZengIOP PublishingJPhys Photonics2515-76472023-01-015404500210.1088/2515-7647/acf973An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memoriesS Simos0https://orcid.org/0000-0002-0776-3532T Moschos1K Fotiadis2D Chatzitheocharis3T Alexoudi4https://orcid.org/0000-0001-6722-201XC Vagionas5D Sacchetto6M Zervas7N Pleros8Department of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceDepartment of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceDepartment of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceCentre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, Greece; School of Physics, Aristotle University of Thessaloniki , Thessaloniki 54124, GreeceDepartment of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceDepartment of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceLIGENTEC SA, Chemin de la Dent-d’Oche 1B , 1024 Ecublens, SwitzerlandLIGENTEC SA, Chemin de la Dent-d’Oche 1B , 1024 Ecublens, SwitzerlandDepartment of Informatics, Aristotle University of Thessaloniki , Thessaloniki 54124, Greece; Centre for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki , Thessaloniki 52124, GreeceIn this work we experimentally demonstrate a Si _3 N _4 photonic integrated circuit which offers row decoding and RAM addressing functionalities. The passive integrated structure comprises a MRR-based wavelength filtering bank scheme in a 2 × 4 configuration, which reveals a suppression ratio in the range of 12–25 dB. The performance of the optical circuit has been evaluated in a system-level testbed, where successful addressing in one RAM row has been achieved. Error-free operation has been accomplished for all cases under study, with the whole row decoder system’s performance to offer a total power penalty of 2.5 dB.https://doi.org/10.1088/2515-7647/acf973optical RAMoptical row decoderintegrated photonic circuit
spellingShingle S Simos
T Moschos
K Fotiadis
D Chatzitheocharis
T Alexoudi
C Vagionas
D Sacchetto
M Zervas
N Pleros
An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
JPhys Photonics
optical RAM
optical row decoder
integrated photonic circuit
title An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
title_full An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
title_fullStr An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
title_full_unstemmed An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
title_short An all-passive Si3N4 optical row decoder circuit for addressable optical RAM memories
title_sort all passive si3n4 optical row decoder circuit for addressable optical ram memories
topic optical RAM
optical row decoder
integrated photonic circuit
url https://doi.org/10.1088/2515-7647/acf973
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