Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot

The double-quantum-dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device, yielding long coherence times with the former and high elec...

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Main Authors: V. Reiher, Y. Berube-Lauziere
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Transactions on Quantum Engineering
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10286051/
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author V. Reiher
Y. Berube-Lauziere
author_facet V. Reiher
Y. Berube-Lauziere
author_sort V. Reiher
collection DOAJ
description The double-quantum-dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device, yielding long coherence times with the former and high electrical susceptibility with the latter for electrically driven spin rotations or coherent interactions with microwave photons. As this architecture is a serious contender for the realization of a versatile physical qubit, improving its control is a critical step toward building a large-scale spin-based universal quantum computer. We show that optimal control pulses generated using the gradient ascent pulse engineering algorithm can yield higher fidelity operating regime transfers than can be achieved using linear methods.
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spelling doaj.art-d9e85c1f345440748c8cf13105e797242024-02-07T00:02:29ZengIEEEIEEE Transactions on Quantum Engineering2689-18082023-01-01411010.1109/TQE.2023.332484110286051Optimal Control of the Operating Regime of a Single-Electron Double Quantum DotV. Reiher0https://orcid.org/0009-0003-1078-9252Y. Berube-Lauziere1https://orcid.org/0000-0001-8106-7845Département de Génie Électrique et de Génie Informatique, Université de Sherbrooke, Sherbrooke, QC, CanadaDépartement de Génie Électrique et de Génie Informatique, Université de Sherbrooke, Sherbrooke, QC, CanadaThe double-quantum-dot device benefits from the advantages of both the spin and charge qubits, while offering ways to mitigate their drawbacks. Careful gate voltage modulation can grant greater spinlike or chargelike dynamics to the device, yielding long coherence times with the former and high electrical susceptibility with the latter for electrically driven spin rotations or coherent interactions with microwave photons. As this architecture is a serious contender for the realization of a versatile physical qubit, improving its control is a critical step toward building a large-scale spin-based universal quantum computer. We show that optimal control pulses generated using the gradient ascent pulse engineering algorithm can yield higher fidelity operating regime transfers than can be achieved using linear methods.https://ieeexplore.ieee.org/document/10286051/Double quantum dot (DQD)gradient ascent pulse engineering (GRAPE)optimal controlquantum computingquantum control
spellingShingle V. Reiher
Y. Berube-Lauziere
Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
IEEE Transactions on Quantum Engineering
Double quantum dot (DQD)
gradient ascent pulse engineering (GRAPE)
optimal control
quantum computing
quantum control
title Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
title_full Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
title_fullStr Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
title_full_unstemmed Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
title_short Optimal Control of the Operating Regime of a Single-Electron Double Quantum Dot
title_sort optimal control of the operating regime of a single electron double quantum dot
topic Double quantum dot (DQD)
gradient ascent pulse engineering (GRAPE)
optimal control
quantum computing
quantum control
url https://ieeexplore.ieee.org/document/10286051/
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