In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance
Abstract The two‐dimensional (2D) in‐plane (lateral) heterostructures have attracted increasing interest for potential applications in the atomically thin electronics and optoelectronics. While most studies focus on semiconductor‐semiconductor lateral heterostructures with highly similar lattice str...
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Wiley
2021-02-01
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| Series: | InfoMat |
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| Online Access: | https://doi.org/10.1002/inf2.12157 |
| _version_ | 1818416677040160768 |
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| author | Huifang Ma Kejing Huang Ruixia Wu Zhengwei Zhang Jia Li Bei Zhao Chen Dai Ziwei Huang Hongmei Zhang Xiangdong Yang Bo Li Yuan Liu Xiangfeng Duan Xidong Duan |
| author_facet | Huifang Ma Kejing Huang Ruixia Wu Zhengwei Zhang Jia Li Bei Zhao Chen Dai Ziwei Huang Hongmei Zhang Xiangdong Yang Bo Li Yuan Liu Xiangfeng Duan Xidong Duan |
| author_sort | Huifang Ma |
| collection | DOAJ |
| description | Abstract The two‐dimensional (2D) in‐plane (lateral) heterostructures have attracted increasing interest for potential applications in the atomically thin electronics and optoelectronics. While most studies focus on semiconductor‐semiconductor lateral heterostructures with highly similar lattice structures between the constituent components, the synthesis of metal‐semiconductor lateral heterostructures is much less explored and usually more challenging due to more distinct lattice structures or chemical properties. Herein, a vapor phase epitaxy growth method of high‐quality metal‐semiconductor lateral heterostructures between tetragonal CoSe and hexagonal WSe2 is reported. The 2D CoSe can selectively nucleate at the edge of pre‐grown WSe2 nanosheets to form CoSe‐WSe2 metal‐semiconductor lateral heterostructures. Optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) studies reveal distinct contrast across the heterostructure interface. High‐resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies further confirm the microstructure modulation across the heterostructure interface. The field‐effect transistors (FETs) of CoSe‐WSe2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts, suggesting the in‐plane metal‐semiconductor junctions may function as improved contacts for the atomically thin electronics. |
| first_indexed | 2024-12-14T11:54:41Z |
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| issn | 2567-3165 |
| language | English |
| last_indexed | 2024-12-14T11:54:41Z |
| publishDate | 2021-02-01 |
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| record_format | Article |
| series | InfoMat |
| spelling | doaj.art-d9e9f248bc2f49459592b8dc8119eeb62022-12-21T23:02:10ZengWileyInfoMat2567-31652021-02-013222222810.1002/inf2.12157In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performanceHuifang Ma0Kejing Huang1Ruixia Wu2Zhengwei Zhang3Jia Li4Bei Zhao5Chen Dai6Ziwei Huang7Hongmei Zhang8Xiangdong Yang9Bo Li10Yuan Liu11Xiangfeng Duan12Xidong Duan13Hunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaDepartment of Applied Physics, School of Physics and Electronics Hunan University Changsha ChinaDepartment of Applied Physics, School of Physics and Electronics Hunan University Changsha ChinaDepartment of Chemistry and Biochemistry University of California Los Angeles California USAHunan Key Laboratory of Two‐Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering Hunan University Changsha ChinaAbstract The two‐dimensional (2D) in‐plane (lateral) heterostructures have attracted increasing interest for potential applications in the atomically thin electronics and optoelectronics. While most studies focus on semiconductor‐semiconductor lateral heterostructures with highly similar lattice structures between the constituent components, the synthesis of metal‐semiconductor lateral heterostructures is much less explored and usually more challenging due to more distinct lattice structures or chemical properties. Herein, a vapor phase epitaxy growth method of high‐quality metal‐semiconductor lateral heterostructures between tetragonal CoSe and hexagonal WSe2 is reported. The 2D CoSe can selectively nucleate at the edge of pre‐grown WSe2 nanosheets to form CoSe‐WSe2 metal‐semiconductor lateral heterostructures. Optical microscopy (OM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) studies reveal distinct contrast across the heterostructure interface. High‐resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies further confirm the microstructure modulation across the heterostructure interface. The field‐effect transistors (FETs) of CoSe‐WSe2 lateral heterostructures show satisfactory Ohmic contacts and considerably better FET performance over those with deposited Cr/Au contacts, suggesting the in‐plane metal‐semiconductor junctions may function as improved contacts for the atomically thin electronics.https://doi.org/10.1002/inf2.121572D atomic crystalschemical vapor depositionfield‐effect transistorslateral heterostructuresmetal‐semiconductor contacts |
| spellingShingle | Huifang Ma Kejing Huang Ruixia Wu Zhengwei Zhang Jia Li Bei Zhao Chen Dai Ziwei Huang Hongmei Zhang Xiangdong Yang Bo Li Yuan Liu Xiangfeng Duan Xidong Duan In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance InfoMat 2D atomic crystals chemical vapor deposition field‐effect transistors lateral heterostructures metal‐semiconductor contacts |
| title | In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance |
| title_full | In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance |
| title_fullStr | In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance |
| title_full_unstemmed | In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance |
| title_short | In‐plane epitaxial growth of 2D CoSe‐WSe2 metal‐semiconductor lateral heterostructures with improved WSe2 transistors performance |
| title_sort | in plane epitaxial growth of 2d cose wse2 metal semiconductor lateral heterostructures with improved wse2 transistors performance |
| topic | 2D atomic crystals chemical vapor deposition field‐effect transistors lateral heterostructures metal‐semiconductor contacts |
| url | https://doi.org/10.1002/inf2.12157 |
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