Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation
This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gat...
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9579412/ |
| _version_ | 1818589918326161408 |
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| author | Uchechukwu A. Maduagwu Viranjay M. Srivastava |
| author_facet | Uchechukwu A. Maduagwu Viranjay M. Srivastava |
| author_sort | Uchechukwu A. Maduagwu |
| collection | DOAJ |
| description | This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gate device known as Cylindrical Surrounding Gate (CSG) MOSFETs. The lightly and heavily doped CSDG MOSFETs have been realized. Their immunity to parameter variation (channel length, Silicon thickness, and Random Dopant Fluctuations (RDFs)) has been compared to CSG MOSFET. This research work indicates that lightly doped CSDG MOSFET exhibits the slightest threshold variations than CSG MOSFETs. It confirms that the lightly doped CSDG MOSFET has better immunity to channel variation than CSG MOSFETs. This is due to its structure and inherent internal and external gate geometry, which offers greater control over the channel. However, RDFs become a dominating factor for heavily doped CSG and CSDG MOSFETs, leading to more dispersion in the threshold variations. Therefore, the CSDG MOSFET’s immunity to channel variation becomes deteriorated due to the larger surface-to-volume ratio. At this point, the CSG MOSFET tends to offer better immunity to process variation. Hence, the sensitivity of threshold voltage to parameter variations depends entirely on the RDFs, as the heavily doped devices are aggressively scaled to the nanometer regime. |
| first_indexed | 2024-12-16T09:48:17Z |
| format | Article |
| id | doaj.art-d9fa264eacf345ec8d64042d4382c544 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-16T09:48:17Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-d9fa264eacf345ec8d64042d4382c5442022-12-21T22:36:08ZengIEEEIEEE Access2169-35362021-01-01914254114255010.1109/ACCESS.2021.31213159579412Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process VariationUchechukwu A. Maduagwu0https://orcid.org/0000-0003-1657-3594Viranjay M. Srivastava1https://orcid.org/0000-0001-5231-7403Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, South AfricaDepartment of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, South AfricaThis research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gate device known as Cylindrical Surrounding Gate (CSG) MOSFETs. The lightly and heavily doped CSDG MOSFETs have been realized. Their immunity to parameter variation (channel length, Silicon thickness, and Random Dopant Fluctuations (RDFs)) has been compared to CSG MOSFET. This research work indicates that lightly doped CSDG MOSFET exhibits the slightest threshold variations than CSG MOSFETs. It confirms that the lightly doped CSDG MOSFET has better immunity to channel variation than CSG MOSFETs. This is due to its structure and inherent internal and external gate geometry, which offers greater control over the channel. However, RDFs become a dominating factor for heavily doped CSG and CSDG MOSFETs, leading to more dispersion in the threshold variations. Therefore, the CSDG MOSFET’s immunity to channel variation becomes deteriorated due to the larger surface-to-volume ratio. At this point, the CSG MOSFET tends to offer better immunity to process variation. Hence, the sensitivity of threshold voltage to parameter variations depends entirely on the RDFs, as the heavily doped devices are aggressively scaled to the nanometer regime.https://ieeexplore.ieee.org/document/9579412/Channel lengthcylindrical surrounding double-gate (CSDG) MOSFETnanotechnologynatural lengthscaling patternsemiconductors |
| spellingShingle | Uchechukwu A. Maduagwu Viranjay M. Srivastava Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation IEEE Access Channel length cylindrical surrounding double-gate (CSDG) MOSFET nanotechnology natural length scaling pattern semiconductors |
| title | Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation |
| title_full | Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation |
| title_fullStr | Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation |
| title_full_unstemmed | Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation |
| title_short | Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation |
| title_sort | sensitivity of lightly and heavily dopped cylindrical surrounding double gate csdg mosfet to process variation |
| topic | Channel length cylindrical surrounding double-gate (CSDG) MOSFET nanotechnology natural length scaling pattern semiconductors |
| url | https://ieeexplore.ieee.org/document/9579412/ |
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