Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

This research work analyzes the sensitivity of Cylindrical Surrounding Double-Gate (CSDG) MOSFET to process variation using the Poisson equation’s analytical solution. This work has been verified with the numerical simulation. Also, the results obtained have been compared with a multi-gat...

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Bibliographic Details
Main Authors: Uchechukwu A. Maduagwu, Viranjay M. Srivastava
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Channel length
cylindrical surrounding double-gate (CSDG) MOSFET
nanotechnology
natural length
scaling pattern
semiconductors
Online Access:https://ieeexplore.ieee.org/document/9579412/

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