Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors
In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (<i>μ</i><sub>FE</sub>), a lower subthr...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/10/917 |
| _version_ | 1797552181013905408 |
|---|---|
| author | Min-Gyu Shin Kang-Hwan Bae Hwan-Seok Jeong Dae-Hwan Kim Hyun-Seok Cha Hyuck-In Kwon |
| author_facet | Min-Gyu Shin Kang-Hwan Bae Hwan-Seok Jeong Dae-Hwan Kim Hyun-Seok Cha Hyuck-In Kwon |
| author_sort | Min-Gyu Shin |
| collection | DOAJ |
| description | In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (<i>μ</i><sub>FE</sub>), a lower subthreshold swing (<i>SS</i>), a positively shifted threshold voltage (<i>V</i><sub>TH</sub>), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower <i>μ</i><sub>FE</sub>, higher <i>SS</i>, negatively shifted <i>V</i><sub>TH</sub>, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs. |
| first_indexed | 2024-03-10T15:56:19Z |
| format | Article |
| id | doaj.art-da0798bd68a14490ac92925e3f15903f |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T15:56:19Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-da0798bd68a14490ac92925e3f15903f2023-11-20T15:42:09ZengMDPI AGMicromachines2072-666X2020-09-01111091710.3390/mi11100917Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film TransistorsMin-Gyu Shin0Kang-Hwan Bae1Hwan-Seok Jeong2Dae-Hwan Kim3Hyun-Seok Cha4Hyuck-In Kwon5School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaIn this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (<i>μ</i><sub>FE</sub>), a lower subthreshold swing (<i>SS</i>), a positively shifted threshold voltage (<i>V</i><sub>TH</sub>), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower <i>μ</i><sub>FE</sub>, higher <i>SS</i>, negatively shifted <i>V</i><sub>TH</sub>, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.https://www.mdpi.com/2072-666X/11/10/917SnOp-channel thin-film transistormetal capping layerwork functionelectrical performance and stability |
| spellingShingle | Min-Gyu Shin Kang-Hwan Bae Hwan-Seok Jeong Dae-Hwan Kim Hyun-Seok Cha Hyuck-In Kwon Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors Micromachines SnO p-channel thin-film transistor metal capping layer work function electrical performance and stability |
| title | Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors |
| title_full | Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors |
| title_fullStr | Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors |
| title_full_unstemmed | Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors |
| title_short | Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors |
| title_sort | effects of capping layers with different metals on electrical performance and stability of p channel sno thin film transistors |
| topic | SnO p-channel thin-film transistor metal capping layer work function electrical performance and stability |
| url | https://www.mdpi.com/2072-666X/11/10/917 |
| work_keys_str_mv | AT mingyushin effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors AT kanghwanbae effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors AT hwanseokjeong effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors AT daehwankim effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors AT hyunseokcha effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors AT hyuckinkwon effectsofcappinglayerswithdifferentmetalsonelectricalperformanceandstabilityofpchannelsnothinfilmtransistors |