Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (<i>μ</i><sub>FE</sub>), a lower subthr...

Full description

Bibliographic Details
Main Authors: Min-Gyu Shin, Kang-Hwan Bae, Hwan-Seok Jeong, Dae-Hwan Kim, Hyun-Seok Cha, Hyuck-In Kwon
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Micromachines
Subjects:
SnO
p-channel thin-film transistor
metal capping layer
work function
electrical performance and stability
Online Access:https://www.mdpi.com/2072-666X/11/10/917

Similar Items

Similar Items