Annealing Induced Saturation in Electron Concentration for V-Doped CdO
As-grown Ar-deposited Cd<sub>1−x</sub>V<sub>x</sub>O and Ar/O<sub>2</sub>-deposited Cd<sub>1−y</sub>V<sub>y</sub>O feature lower and higher electron concentrations than 4 × 10<sup>20</sup> cm<sup>−3</sup>, respective...
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MDPI AG
2021-09-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/11/9/1079 |
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| author | Yajie Li Guibin Chen Kinman Yu Wladyslaw Walukiewicz Weiping Gong |
| author_facet | Yajie Li Guibin Chen Kinman Yu Wladyslaw Walukiewicz Weiping Gong |
| author_sort | Yajie Li |
| collection | DOAJ |
| description | As-grown Ar-deposited Cd<sub>1−x</sub>V<sub>x</sub>O and Ar/O<sub>2</sub>-deposited Cd<sub>1−y</sub>V<sub>y</sub>O feature lower and higher electron concentrations than 4 × 10<sup>20</sup> cm<sup>−3</sup>, respectively. After isothermal and isochronal annealing under N<sub>2</sub> ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 10<sup>20</sup> cm<sup>−3</sup> which is close to Fermi stabilization energy (<i>E<sub>FS</sub></i>) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO. |
| first_indexed | 2024-03-10T07:46:52Z |
| format | Article |
| id | doaj.art-da236321df3b4bb1afd4cb98b643c6d1 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-10T07:46:52Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-da236321df3b4bb1afd4cb98b643c6d12023-11-22T12:35:32ZengMDPI AGCrystals2073-43522021-09-01119107910.3390/cryst11091079Annealing Induced Saturation in Electron Concentration for V-Doped CdOYajie Li0Guibin Chen1Kinman Yu2Wladyslaw Walukiewicz3Weiping Gong4Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, ChinaPhysics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Huaian 223001, ChinaMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USAGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, ChinaAs-grown Ar-deposited Cd<sub>1−x</sub>V<sub>x</sub>O and Ar/O<sub>2</sub>-deposited Cd<sub>1−y</sub>V<sub>y</sub>O feature lower and higher electron concentrations than 4 × 10<sup>20</sup> cm<sup>−3</sup>, respectively. After isothermal and isochronal annealing under N<sub>2</sub> ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 10<sup>20</sup> cm<sup>−3</sup> which is close to Fermi stabilization energy (<i>E<sub>FS</sub></i>) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO.https://www.mdpi.com/2073-4352/11/9/1079rapid thermal annealingHall Effect propertiesFermi stabilization energyamphoteric defects model |
| spellingShingle | Yajie Li Guibin Chen Kinman Yu Wladyslaw Walukiewicz Weiping Gong Annealing Induced Saturation in Electron Concentration for V-Doped CdO Crystals rapid thermal annealing Hall Effect properties Fermi stabilization energy amphoteric defects model |
| title | Annealing Induced Saturation in Electron Concentration for V-Doped CdO |
| title_full | Annealing Induced Saturation in Electron Concentration for V-Doped CdO |
| title_fullStr | Annealing Induced Saturation in Electron Concentration for V-Doped CdO |
| title_full_unstemmed | Annealing Induced Saturation in Electron Concentration for V-Doped CdO |
| title_short | Annealing Induced Saturation in Electron Concentration for V-Doped CdO |
| title_sort | annealing induced saturation in electron concentration for v doped cdo |
| topic | rapid thermal annealing Hall Effect properties Fermi stabilization energy amphoteric defects model |
| url | https://www.mdpi.com/2073-4352/11/9/1079 |
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