Annealing Induced Saturation in Electron Concentration for V-Doped CdO

Annealing Induced Saturation in Electron Concentration for V-Doped CdO

As-grown Ar-deposited Cd<sub>1−x</sub>V<sub>x</sub>O and Ar/O<sub>2</sub>-deposited Cd<sub>1−y</sub>V<sub>y</sub>O feature lower and higher electron concentrations than 4 × 10<sup>20</sup> cm<sup>−3</sup>, respective...

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Bibliographic Details
Main Authors:	Yajie Li, Guibin Chen, Kinman Yu, Wladyslaw Walukiewicz, Weiping Gong
Format:	Article
Language:	English
Published:	MDPI AG 2021-09-01
Series:	Crystals
Subjects:	rapid thermal annealing Hall Effect properties Fermi stabilization energy amphoteric defects model
Online Access:	https://www.mdpi.com/2073-4352/11/9/1079

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