Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer
It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:M...
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| Language: | English |
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MDPI AG
2018-06-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/18/7/2065 |
| _version_ | 1811278888928542720 |
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| author | Shibo Wang Xinqiang Wang Zhaoying Chen Ping Wang Qi Qi Xiantong Zheng Bowen Sheng Huapeng Liu Tao Wang Xin Rong Mo Li Jian Zhang Xuelin Yang Fujun Xu Bo Shen |
| author_facet | Shibo Wang Xinqiang Wang Zhaoying Chen Ping Wang Qi Qi Xiantong Zheng Bowen Sheng Huapeng Liu Tao Wang Xin Rong Mo Li Jian Zhang Xuelin Yang Fujun Xu Bo Shen |
| author_sort | Shibo Wang |
| collection | DOAJ |
| description | It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application. |
| first_indexed | 2024-04-13T00:43:45Z |
| format | Article |
| id | doaj.art-da2c3b6ec29349a8abecd84a1c0adb3e |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-04-13T00:43:45Z |
| publishDate | 2018-06-01 |
| publisher | MDPI AG |
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| series | Sensors |
| spelling | doaj.art-da2c3b6ec29349a8abecd84a1c0adb3e2022-12-22T03:10:04ZengMDPI AGSensors1424-82202018-06-01187206510.3390/s18072065s18072065Enhanced Hydrogen Detection Based on Mg-Doped InN EpilayerShibo Wang0Xinqiang Wang1Zhaoying Chen2Ping Wang3Qi Qi4Xiantong Zheng5Bowen Sheng6Huapeng Liu7Tao Wang8Xin Rong9Mo Li10Jian Zhang11Xuelin Yang12Fujun Xu13Bo Shen14State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaDongguan Institute of Opto-Electronics, Peking University, Dongguan 523808, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaMicrosystem & Terahertz Research Center, No 596, Yinhe Road, Shuangliu, Chengdu 610200, ChinaMicrosystem & Terahertz Research Center, No 596, Yinhe Road, Shuangliu, Chengdu 610200, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, ChinaIt is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~1013 cm−2 on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H2/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.http://www.mdpi.com/1424-8220/18/7/2065InNMg-dopinghydrogen sensor |
| spellingShingle | Shibo Wang Xinqiang Wang Zhaoying Chen Ping Wang Qi Qi Xiantong Zheng Bowen Sheng Huapeng Liu Tao Wang Xin Rong Mo Li Jian Zhang Xuelin Yang Fujun Xu Bo Shen Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer Sensors InN Mg-doping hydrogen sensor |
| title | Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer |
| title_full | Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer |
| title_fullStr | Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer |
| title_full_unstemmed | Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer |
| title_short | Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer |
| title_sort | enhanced hydrogen detection based on mg doped inn epilayer |
| topic | InN Mg-doping hydrogen sensor |
| url | http://www.mdpi.com/1424-8220/18/7/2065 |
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