Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors
Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved charge transport against these disorders. Here, w...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-10-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723007179 |
| _version_ | 1797660539846918144 |
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| author | Yu Shan Zean Guo Yuan Kai Ke Hu Jiawei Wang |
| author_facet | Yu Shan Zean Guo Yuan Kai Ke Hu Jiawei Wang |
| author_sort | Yu Shan |
| collection | DOAJ |
| description | Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved charge transport against these disorders. Here, we demonstrate in amorphous indacenodithiophen-co-benzothiadia (IDT-BT) based dual-gate organic thin-film transistors (DG-OTFTs) that the mobility can be robustly increased from 0.8 to 1.37 cm2 V−1 s−1, when voltage biases of opposite signs (negative one accumulate holes, positive one deplete holes) are applied on the dual independent gate electrodes. In details, the positive bias can confine the spatial distribution of the accumulated carriers near the negatively biased gate, leading to a higher effective carrier concentration with higher mobility. In addition, the interface confinement effect of carriers was further verified by two-dimensional numerical simulation, and calculations based on the variable range hopping method were performed to accurately reproduce the experimentally observed charge transport behavior in DG-OTFTs. |
| first_indexed | 2024-03-11T18:31:23Z |
| format | Article |
| id | doaj.art-da407dcad8894efcadfefaee2f2eb9d6 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-11T18:31:23Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
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| series | Results in Physics |
| spelling | doaj.art-da407dcad8894efcadfefaee2f2eb9d62023-10-13T11:04:06ZengElsevierResults in Physics2211-37972023-10-0153106924Carrier confinement for mobility enhancement in dual-gate organic thin-film transistorsYu Shan0Zean Guo1Yuan Kai2Ke Hu3Jiawei Wang4School of Microelectronics, University of Science and Technology of China, Hefei, 230026 China; Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing, 100029 ChinaLaboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing, 100029 China; University of Chinese Academy of Sciences, Beijing, 100049 ChinaLaboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing, 100029 China; University of Chinese Academy of Sciences, Beijing, 100049 ChinaLaboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing, 100029 China; University of Chinese Academy of Sciences, Beijing, 100049 ChinaLaboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing, 100029 China; University of Chinese Academy of Sciences, Beijing, 100049 China; Corresponding author at: Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences(CAS), Beijing 100029, China.Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved charge transport against these disorders. Here, we demonstrate in amorphous indacenodithiophen-co-benzothiadia (IDT-BT) based dual-gate organic thin-film transistors (DG-OTFTs) that the mobility can be robustly increased from 0.8 to 1.37 cm2 V−1 s−1, when voltage biases of opposite signs (negative one accumulate holes, positive one deplete holes) are applied on the dual independent gate electrodes. In details, the positive bias can confine the spatial distribution of the accumulated carriers near the negatively biased gate, leading to a higher effective carrier concentration with higher mobility. In addition, the interface confinement effect of carriers was further verified by two-dimensional numerical simulation, and calculations based on the variable range hopping method were performed to accurately reproduce the experimentally observed charge transport behavior in DG-OTFTs.http://www.sciencedirect.com/science/article/pii/S2211379723007179Dual-gate organic thin-film transistorsPolymer semiconductorCharge transportCarrier concentrationSpatial confinement |
| spellingShingle | Yu Shan Zean Guo Yuan Kai Ke Hu Jiawei Wang Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors Results in Physics Dual-gate organic thin-film transistors Polymer semiconductor Charge transport Carrier concentration Spatial confinement |
| title | Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors |
| title_full | Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors |
| title_fullStr | Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors |
| title_full_unstemmed | Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors |
| title_short | Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors |
| title_sort | carrier confinement for mobility enhancement in dual gate organic thin film transistors |
| topic | Dual-gate organic thin-film transistors Polymer semiconductor Charge transport Carrier concentration Spatial confinement |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723007179 |
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