N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials

N-type Mg3Sb2-xBix alloys have been extensively studied in recent years due to their significantly enhanced thermoelectric figure of merit (zT), thus promoting them as potential candidates for waste heat recovery and cooling applications. In this review, the effects resulting from alloying Mg3Bi2 wi...

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Main Authors: Hongjing Shang, Zhongxin Liang, Congcong Xu, Jun Mao, Hongwei Gu, Fazhu Ding, Zhifeng Ren
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS) 2020-01-01
Series:Research
Online Access:http://dx.doi.org/10.34133/2020/1219461
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author Hongjing Shang
Zhongxin Liang
Congcong Xu
Jun Mao
Hongwei Gu
Fazhu Ding
Zhifeng Ren
author_facet Hongjing Shang
Zhongxin Liang
Congcong Xu
Jun Mao
Hongwei Gu
Fazhu Ding
Zhifeng Ren
author_sort Hongjing Shang
collection DOAJ
description N-type Mg3Sb2-xBix alloys have been extensively studied in recent years due to their significantly enhanced thermoelectric figure of merit (zT), thus promoting them as potential candidates for waste heat recovery and cooling applications. In this review, the effects resulting from alloying Mg3Bi2 with Mg3Sb2, including narrowed bandgap, decreased effective mass, and increased carrier mobility, are summarized. Subsequently, defect-controlled electrical properties in n-type Mg3Sb2-xBix are revealed. On one hand, manipulation of intrinsic and extrinsic defects can achieve optimal carrier concentration. On the other hand, Mg vacancies dominate carrier-scattering mechanisms (ionized impurity scattering and grain boundary scattering). Both aspects are discussed for Mg3Sb2-xBix thermoelectric materials. Finally, we review the present status of, and future outlook for, these materials in power generation and cooling applications.
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spelling doaj.art-da6b0af83eef4520893a0c00608a99f02024-03-03T05:03:45ZengAmerican Association for the Advancement of Science (AAAS)Research2639-52742020-01-01202010.34133/2020/1219461N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric MaterialsHongjing Shang0Zhongxin Liang1Congcong Xu2Jun Mao3Hongwei Gu4Fazhu Ding5Zhifeng Ren6Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USA; Key Laboratory of Applied Superconductivity and Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, ChinaDepartment of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USADepartment of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USADepartment of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USAKey Laboratory of Applied Superconductivity and Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, ChinaKey Laboratory of Applied Superconductivity and Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, ChinaDepartment of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204, USAN-type Mg3Sb2-xBix alloys have been extensively studied in recent years due to their significantly enhanced thermoelectric figure of merit (zT), thus promoting them as potential candidates for waste heat recovery and cooling applications. In this review, the effects resulting from alloying Mg3Bi2 with Mg3Sb2, including narrowed bandgap, decreased effective mass, and increased carrier mobility, are summarized. Subsequently, defect-controlled electrical properties in n-type Mg3Sb2-xBix are revealed. On one hand, manipulation of intrinsic and extrinsic defects can achieve optimal carrier concentration. On the other hand, Mg vacancies dominate carrier-scattering mechanisms (ionized impurity scattering and grain boundary scattering). Both aspects are discussed for Mg3Sb2-xBix thermoelectric materials. Finally, we review the present status of, and future outlook for, these materials in power generation and cooling applications.http://dx.doi.org/10.34133/2020/1219461
spellingShingle Hongjing Shang
Zhongxin Liang
Congcong Xu
Jun Mao
Hongwei Gu
Fazhu Ding
Zhifeng Ren
N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
Research
title N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
title_full N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
title_fullStr N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
title_full_unstemmed N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
title_short N-Type Mg3Sb2-xBix Alloys as Promising Thermoelectric Materials
title_sort n type mg3sb2 xbix alloys as promising thermoelectric materials
url http://dx.doi.org/10.34133/2020/1219461
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