Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation
The hole transport material (HTM)-free perovskite solar cells (PSCs) have attracted widespread interest due to enhanced stability and lowered cost as compared to the sandwich-type PSCs with an organic hole conductor. For the absorber layer, CsPbI _3 has become a competitive candidate for its good ch...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac5778 |
| _version_ | 1797746634546741248 |
|---|---|
| author | Xingyu Xu Jianfeng Wang Dan Cao Yun Zhou Zhiwei Jiao |
| author_facet | Xingyu Xu Jianfeng Wang Dan Cao Yun Zhou Zhiwei Jiao |
| author_sort | Xingyu Xu |
| collection | DOAJ |
| description | The hole transport material (HTM)-free perovskite solar cells (PSCs) have attracted widespread interest due to enhanced stability and lowered cost as compared to the sandwich-type PSCs with an organic hole conductor. For the absorber layer, CsPbI _3 has become a competitive candidate for its good chemical-components stability, excellent optoelectronic properties and most proper bandgap among inorganic halide perovskites. However, the power conversion efficiency of CsPbI _3 -based HTM-free PSCs is still much inferior to that of conventional ones. In this work, an all-inorganic-perovskite-heterojunction CsPbI _3 /CsSnI _3 is proposed as the absorber and the HTM-free CsPbI _3 /CsSnI _3 PSCs are investigated systematically through numerical simulation by using SCAPS-1D. Compared with the HTM-free PSCs employing a single CsPbI _3 absorbing layer, the HTM-free CsPbI _3 /CsSnI _3 PSCs have the extended absorption range and enhanced performance. The best cell efficiency is increased from 15.60% to 19.99% and from 13.87% to 19.59% for the cell with a back-front Au electrode and a back-front C electrode, respectively. It reveals that for the HTM-free CsPbI _3 /CsSnI _3 heterojunction cells, C is a good choice for back-front electrode as it can achieve desirable cell performance with improved stability and lowered fabrication cost. These results indicate that the proposed HTM-free CsPbI _3 /CsSnI _3 heterojunction cells are promising for photovoltaic applications. |
| first_indexed | 2024-03-12T15:40:38Z |
| format | Article |
| id | doaj.art-dacd26f55c79415e81836c4804da635c |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:40:38Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-dacd26f55c79415e81836c4804da635c2023-08-09T16:01:54ZengIOP PublishingMaterials Research Express2053-15912022-01-019202550910.1088/2053-1591/ac5778Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulationXingyu Xu0Jianfeng Wang1https://orcid.org/0000-0002-3803-0921Dan Cao2Yun Zhou3Zhiwei Jiao4Department of Physics, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of China; Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of ChinaDepartment of Physics, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of China; Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of ChinaDepartment of Physics, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of China; Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of ChinaDepartment of Physics, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of China; Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of ChinaDepartment of Physics, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of China; Key Laboratory of Intelligent Manufacturing Quality Big Data Tracing and Analysis of Zhejiang Province, China Jiliang University , Hangzhou 310018, Zhejiang, People’s Republic of ChinaThe hole transport material (HTM)-free perovskite solar cells (PSCs) have attracted widespread interest due to enhanced stability and lowered cost as compared to the sandwich-type PSCs with an organic hole conductor. For the absorber layer, CsPbI _3 has become a competitive candidate for its good chemical-components stability, excellent optoelectronic properties and most proper bandgap among inorganic halide perovskites. However, the power conversion efficiency of CsPbI _3 -based HTM-free PSCs is still much inferior to that of conventional ones. In this work, an all-inorganic-perovskite-heterojunction CsPbI _3 /CsSnI _3 is proposed as the absorber and the HTM-free CsPbI _3 /CsSnI _3 PSCs are investigated systematically through numerical simulation by using SCAPS-1D. Compared with the HTM-free PSCs employing a single CsPbI _3 absorbing layer, the HTM-free CsPbI _3 /CsSnI _3 PSCs have the extended absorption range and enhanced performance. The best cell efficiency is increased from 15.60% to 19.99% and from 13.87% to 19.59% for the cell with a back-front Au electrode and a back-front C electrode, respectively. It reveals that for the HTM-free CsPbI _3 /CsSnI _3 heterojunction cells, C is a good choice for back-front electrode as it can achieve desirable cell performance with improved stability and lowered fabrication cost. These results indicate that the proposed HTM-free CsPbI _3 /CsSnI _3 heterojunction cells are promising for photovoltaic applications.https://doi.org/10.1088/2053-1591/ac5778CsPbI3/CsSnI3 heterojunctionhole transport material freeperovskite solar cellssimulation |
| spellingShingle | Xingyu Xu Jianfeng Wang Dan Cao Yun Zhou Zhiwei Jiao Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation Materials Research Express CsPbI3/CsSnI3 heterojunction hole transport material free perovskite solar cells simulation |
| title | Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation |
| title_full | Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation |
| title_fullStr | Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation |
| title_full_unstemmed | Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation |
| title_short | Design of all-inorganic hole-transport-material-free CsPbI3/CsSnI3 heterojunction solar cells by device simulation |
| title_sort | design of all inorganic hole transport material free cspbi3 cssni3 heterojunction solar cells by device simulation |
| topic | CsPbI3/CsSnI3 heterojunction hole transport material free perovskite solar cells simulation |
| url | https://doi.org/10.1088/2053-1591/ac5778 |
| work_keys_str_mv | AT xingyuxu designofallinorganicholetransportmaterialfreecspbi3cssni3heterojunctionsolarcellsbydevicesimulation AT jianfengwang designofallinorganicholetransportmaterialfreecspbi3cssni3heterojunctionsolarcellsbydevicesimulation AT dancao designofallinorganicholetransportmaterialfreecspbi3cssni3heterojunctionsolarcellsbydevicesimulation AT yunzhou designofallinorganicholetransportmaterialfreecspbi3cssni3heterojunctionsolarcellsbydevicesimulation AT zhiweijiao designofallinorganicholetransportmaterialfreecspbi3cssni3heterojunctionsolarcellsbydevicesimulation |