Combined Implications of UV/O<sub>3</sub> Interface Modulation with HfSiO<sub>X</sub> Surface Passivation on AlGaN/AlN/GaN MOS-HEMT

Combined Implications of UV/O<sub>3</sub> Interface Modulation with HfSiO<sub>X</sub> Surface Passivation on AlGaN/AlN/GaN MOS-HEMT

Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the surface passivation effects in AlGaN/AlN/GaN-base...

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Bibliographic Details
Main Authors:	Soumen Mazumder, Ssu-Hsien Li, Zhan-Gao Wu, Yeong-Her Wang
Format:	Article
Language:	English
Published:	MDPI AG 2021-01-01
Series:	Crystals
Subjects:	AlGaN/AlN/GaN gallium oxide MOS-HEMT HfSiO<sub>X</sub> UV/O<sub>3</sub> passivation
Online Access:	https://www.mdpi.com/2073-4352/11/2/136

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